SEMICONDUCTOR
TECHNICAL DATA
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
*
Complement to SS8050LT1
*
Collector Current :Ic= -800mA
*
High Total Power Dissipation :Pc=625mW
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Shandong Yiguang Electronic Joint stock Co., Ltd
SS8550LT1
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Veb
Ic
P
D
Tj
Tstg
Rating
-40
-25
-6
-800
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iceo
Iebo
Hfe
1
Hfe
2
Vce(sat)
Vbe(sat)
fT
100
120
40
-0.6
-1.2
V
V
MHz
Min
-40
-25
-6
-100
-100
-100
350
Typ
Max
Unit
V
V
V
NA
NA
Na
Test Conditions
Ic=-100uA Ie=0
Ic= -1mA Ib=0
Ie= -100uA Ic=0
Vcb= -40V Ie=0
Vce=-20 V Ie=0
Veb=-5V Ic=0
Vce= -1V Ic= 100mA
Vce= -1V Ic= 800mA
Ic= -800mA Ib= -80mA
Ic= -800mA Ib= -80mA
Vce=-10V Ic=-50mA
f=30MHz
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width≤300uS,Duty cycle≤2%
CLASSIFICATION OF Hfe
(1)
Rank
Range
DEVICE MARKING:
SS8550LT1=Y2
L
120—200
H
200—350
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
SS8５50LT1
PNPEPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
SS8５50LT1
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