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TS9918

产品描述Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN
产品类别分立半导体    晶体管   
文件大小116KB,共1页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

TS9918概述

Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN

TS9918规格参数

参数名称属性值
厂商名称SANYO
零件包装代码TO-220FI
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
配置SINGLE
最小漏源击穿电压600 V
最大漏极电流 (ID)7 A
最大漏源导通电阻1 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管元件材料SILICON

TS9918相似产品对比

TS9918 2SK2629 2SK2630 TS9650 TS9654 TS9904 TS9912
描述 Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN Power Field-Effect Transistor, 12A I(D), 600V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 3.5A I(D), 600V, 2.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 2 PIN Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-F2 FLANGE MOUNT, R-PSFM-T3
针数 3 2 2 3 3 2 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
最小漏源击穿电压 600 V 600 V 600 V 600 V 600 V 600 V 600 V
最大漏极电流 (ID) 7 A 10 A 12 A 5 A 10 A 3.5 A 8 A
最大漏源导通电阻 1 Ω 1 Ω 0.8 Ω 2 Ω 1 Ω 2.6 Ω 1.2 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-F2 R-PSFM-T3
端子数量 3 3 3 3 3 2 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO YES NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE FLAT THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
零件包装代码 TO-220FI TO-3PB TO-3PB SFM SFM - SFM
配置 SINGLE Single Single SINGLE SINGLE - SINGLE
JEDEC-95代码 TO-220AB - - TO-220AB TO-220AB - TO-220AB
元件数量 1 - - 1 1 - 1

 
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