Power Field-Effect Transistor, 3.5A I(D), 600V, 2.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 2 PIN
| 参数名称 | 属性值 |
| 厂商名称 | SANYO |
| 包装说明 | FLANGE MOUNT, R-PSFM-F2 |
| 针数 | 2 |
| Reach Compliance Code | unknown |
| 最小漏源击穿电压 | 600 V |
| 最大漏极电流 (ID) | 3.5 A |
| 最大漏源导通电阻 | 2.6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-F2 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| TS9904 | 2SK2629 | 2SK2630 | TS9650 | TS9654 | TS9912 | TS9918 | |
|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 2 PIN | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 12A I(D), 600V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN |
| 包装说明 | FLANGE MOUNT, R-PSFM-F2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 2 | 2 | 2 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最小漏源击穿电压 | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| 最大漏极电流 (ID) | 3.5 A | 10 A | 12 A | 5 A | 10 A | 8 A | 7 A |
| 最大漏源导通电阻 | 2.6 Ω | 1 Ω | 0.8 Ω | 2 Ω | 1 Ω | 1.2 Ω | 1 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-F2 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 端子数量 | 2 | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO | NO | NO | NO | NO |
| 端子形式 | FLAT | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 零件包装代码 | - | TO-3PB | TO-3PB | SFM | SFM | SFM | TO-220FI |
| 配置 | - | Single | Single | SINGLE | SINGLE | SINGLE | SINGLE |
| JEDEC-95代码 | - | - | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| 元件数量 | - | - | - | 1 | 1 | 1 | 1 |
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