UM3302
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The UM3302 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The UM3302 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
D1
Product Summery
BVDSS
30V
-30V
Applications
RDSON
10.5mΩ
25mΩ
ID
9.5A
-6.5A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
CCFL Back-light Inverter
Dual SOP8 Pin Configuration
D1 D2
D2
Absolute Maximum Ratings
S2
S1 G1
Parameter
Drain-Source Voltage
Gate-Source Voltage
G2
Rating
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
A
=25℃
T
STG
T
J
N-Ch
30
±20
9.5
7.6
40
138
35
1.5
-55 to 150
-55 to 150
1
P-Ch
-30
±20
-6.5
-5.2
-26
176
-38
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
2
Single Pulse Avalanche Energy
3
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
85
25
Unit
℃/W
℃/W
Rev A.02 D051011
1
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=10A
V
GS
=4.5V , I
D
=8A
V
GS
=V
DS
, I
D
=250uA
V
DS
=24V , V
GS
=0V , T
J
=25℃
V
DS
=24V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=10A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=15V , V
GS
=4.5V , I
D
=10A
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=15V , V
GS
=10V , R
G
=3.3Ω
I
D
=10A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.027
8.5
12
1.5
-5.8
---
---
---
5.8
2.2
12.5
4.4
5
6.2
59
27.6
8.4
1317
163
131
Max.
---
---
10.5
15
2.5
---
1
5
±100
---
4.4
17.5
6.2
7.0
12.4
106
55
16.8
1845
228.2
183.4
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=20A
Min.
45
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
I
F
=10A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
12.5
5
Max.
9.5
40
1.2
---
---
Unit
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=35A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-6A
V
GS
=-4.5V , I
D
=-4A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25℃
V
DS
=-24V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-5V , I
D
=-6A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=-15V , V
GS
=-4.5V , I
D
=-6A
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-6A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.022
20
34
-1.5
4.6
---
---
---
17
13
12.6
4.8
4.8
4.6
14.8
41
19.6
1345
194
158
Max.
---
---
25
42
-2.5
---
-1
-5
±100
---
26
17.6
6.7
6.7
9.2
26.6
82
39.2
1883
272
221
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-20A
Min.
49
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-6A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
16.3
5.9
Max.
-6.5
-26
-1.2
---
---
Unit
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-38A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
42
12
I
D
=8A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
11
35
I
D
Drain Current (A)
R
DSON
(mΩ)
28
21
14
9
8
7
0
0
0.5
6
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
2
4
V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
12
10
Fig.2 On-Resistance vs. Gate-Source
I
S -
Source Current(A)
8
T
J
=150℃ T
J
=25℃
6
4
2
0
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.4
Normalized
V
GS(th)
1.0
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4
UM3302
N-Ch and P-Ch Fast Switching MOSFETs
10000
F=1.0MHz
Ciss
Capacitance (pF)
1000
Coss
100
Crss
10
1
5
9
13
17
21
25
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
5
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