WILLAS
Transient Voltage Suppressors for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
SESD9D5C
THRU
FM1200-M
PACKAGE
Pb Free Product
Features
Package outline
Features
Low Body Height
Low Leakage current
Response Time is Typically < 1 ns
SOD-123H
General
profile surface mounted application in order to
•
Low
Description
better reverse leakage current and thermal resistance.
optimize board space.
The
SESD9D5C
is designed to protect voltage
•
Low power loss, high efficiency.
sensitive components from ESD and
voltage drop.
•
High current capability, low forward
transient voltage
•
High surge capability.
events. Excellent clamping capability, low leakage, and
•
Guardring for overvoltage protection.
fast response time, make these parts ideal for ESD
•
Ultra high-speed switching.
protection on designs where
metal silicon junction.
at a
•
Silicon epitaxial planar chip,
board space is
•
Lead-free parts meet
small size, it is suited for
premium. Because of its
environmental standards of
use
MIL-STD-19500 /228
in cellular phones, MP3 players, digital cameras and
RoHS product for packing code suffix "G"
•
many
Halogen free product for packing code suffix "H"
space is
other portable applications where board
Small Body Outline Dimensions
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Peak Power up to 150 Watts @ 8 x 20
μs
Pulse
0.071(1.8)
0.056(1.4)
at a premium.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
Applications
•
Terminals :Plated terminals, solderable per MIL-STD-750
Cellular phones
2026
Method
Portable
:
devices
by cathode band
•
Polarity Indicated
•
Mounting Position
Digital cameras
: Any
•
Weight : Approximated 0.011 gram
Power supplies
Mechanical data
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
0.040(1.0)
0.024(0.6)
Complies with the following standards
Typ.
0.031(0.8) Typ.
0.031(0.8)
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
Dimensions in inches and (millimeters)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Functional diagram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
SOD-923
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Value
-55 to
150
+150
Typical Thermal Resistance (Note 2)
Absolute Ratings (T
amb
=25°C )
Symbol
Typical Junction Capacitance (Note 1)
Parameter
-55 to +125
40
120
Units
℃
P
PP
Peak Pulse
Operating Temperature Range
Storage Temperature Range
Power (t
p
= 8/20μs)
T
J
-
65
to +175
W
°C
0.9
°C
0.92
T
L
TSTG
Maximum lead temperature for soldering during 10s
260
T
stg
op
Storage Temperature
CHARACTERISTICS
Range
-55 to +155
°C
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
Range
0.50
0.70
0.5
10
U
Maximum Forward Voltage at 1.0A
Temperature
T
Operating
DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-40
0.85
+125
to
150
±15
±8
40
25
400
T
j
I
R
Maximum junction temperature
@T A=125℃
°C
kV
A
kV
V
m
NOTES:
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
ESD Voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
air discharge
contact discharge
Per Human Body Model
Per Machine Model
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
Transient Voltage Suppressors for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESD9D5C
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
Electrical Parameter
optimize board space.
•
Low power loss, high efficiency.
low forward
•
High
Symbol
current capability,
Parameter
voltage drop.
•
High surge capability.
Reverse Peak Pulse
Maximum
I
•
Guardring for overvoltage protection.
PP
Current
•
Ultra high-speed switching.
V
C
Clamping Voltage
metal
•
Silicon epitaxial planar chip,
@ I
PP
silicon junction.
V
•
Lead-free parts meet environmental standards of
Working Peak Reverse Voltage
RWM
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Maximum Reverse Leakage Current
RoHS product for packing code suffix "G"
•
I
R
Halogen
@ V
product for packing code suffix "H"
free
RWM
Mechanical data
I
T
Test Current
UL94-V0 rated flame retardant
•
Epoxy :
Breakdown Voltage @ I
V
BR
T
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
•
Numbers
Part
Weight : Approximated 0.011 gram
V
BR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
I
I
C
Typ. 0v
bias
pF
11
Ratings at 25℃ ambient temperature unless otherwise specified.
Min.
Typ.
Max.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
R
RWM
R
Marking Code
SESD9D5C
RATINGS
V
V
5.6
6.7
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
mA
V
µA
1
7.8
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
V
RMS
V
DC
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
1
13
30
21
14
40
28
40
5.0
15
50
35
50
16
60
42
60
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
*Surge current waveform per Figure 1.
Maximum DC Blocking Voltage
30
V
1. V
BR
Average Forward
with a pulse test current
O
I
T
at an ambient temperature of 25℃．
1.0
Maximum
is measured
Rectified Current
I
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig1. Pulse Waveform
Fig2. Power Derating Curve
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
Transient Voltage Suppressors for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SESD9D5C
THRU
FM1200-M
Package outline
Pb Free Product
Features
Application Note
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
•
Low profile surface mounted application in order to
optimize board space.
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient
0.146(3.7)
•
Low power loss, high efficiency.
to a low enough level such that damage to the protected
semiconductor is prevented.
0.130(3.3)
0.012(0.3) Typ.
•
High current capability, low forward voltage drop.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection
•
High surge capability.
•
Guardring for overvoltage protection.
elements, connected between the signal lines to ground. As the transient rises above the operating
0.071(1.8)
voltage of
•
Ultra high-speed switching.
0.056(1.4)
the device, the TVS becomes a
metal silicon junction.
diverting the transient current to ground. The
SESD9D5C
•
Silicon epitaxial planar chip,
low impedance path
Lead-free parts meet environmental standards of
is the
•
ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOD-923 package
suffix "G"
design flexibility in the design of high density boards where the space
•
RoHS product for packing code
allows
saving
Halogen
premium. This enables to shorten the routing and contributes to hardening against ESD.
is at a
free product for packing code suffix "H"
MIL-STD-19500 /228
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case Molded plastic,
Data
SOD-923
:
Mechanical
SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
.030(0.75)
.033(0.85)
•
Weight : Approximated 0.011 gram
.006(0.15)
.010(0.25)
Dimensions in inches and (millimeters)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.022(0.55)
.026(0.65)
12
20
14
20
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
.013(0.34)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.003(0.07)
.007(0.17)
.017(0.43)
Peak Forward Surge Current 8.3 ms single half sine-wave
-55 to +125
40
120
-
65
to +175
-55 to +150
CHARACTERISTICS
.037(0.95)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Average Reverse Current at @T A=25℃
.041(1.05)
@T A=125℃
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
Dimensions in inches and (millimeters)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Marking
Type number
ESD
Marking code
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
FPGA/CPLD
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