WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
N-Channel
Low power loss, high efficiency.
Effect Transistor
•
Enhancement Mode Field
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
DESCRIPTION
•
Ultra high-speed switching.
The
•
SE3406
use advanced trench
silicon junction.
provide excellent
Silicon epitaxial planar chip, metal
technology to
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
R
DS(ON)
and low gate charge. This device is suitable for use as a
•
RoHS product for packing code suffix "G"
Halogen free product for packing code
load switch or in PWM applications.
suffix "H"
FM120-M
SE3406
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
Mechanical data
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Pr
el
Marking Code
MARKING: R6
RATINGS
im
12
20
14
13
30
21
30
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
ina
ry
V
RRM
V
RMS
I
O
14
40
28
40
15
50
35
50
16
60
42
60
1.0
Value
30
I
FSM
Pb-Free
Epoxy : UL94-V0
available
retardant
•
package is
rated flame
•
Case :
for packing code suffix
RoHS product
Molded plastic, SOD-123H
”G”
,
•
Terminals :Plated
for packing code suffix “H”
terminals, solderable per MIL-STD-750
Halogen free product
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum ratings
Voltage
Maximum DC Blocking
( T
a
=25℃ unless otherwise noted)
20
V
DC
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Drain-Source Voltage
Parameter
Symbol
V
DS
Unit
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Gate-Source Voltage
R
ΘJA
C
J
T
J
TSTG
V
GS
I
DM
P
D
T
J
T
STG
R
θJA
30
±20
40
120
V
V
Continuous Drain Current
I
D
-55 to +125
Drain Current-Pulsed
(note
Storage Temperature Range
1)
3.6
15
-
65
to +175
0.35
357
150
0.70
0.5
A
-55 to +150
A
W
℃/W
0.9
℃
℃
Power Dissipation
Maximum Forward Voltage at 1.0A DC
Rated DC
Temperature
Storage
Blocking Voltage
Thermal Resistance from Junction to Ambient
@T A=125℃
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
I
R
0.50
0.85
0.92
Junction Temperature
Maximum Average Reverse Current at @T A=25℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
-55~ +150
10
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage
=25℃ unless otherwise
Electrical characteristics (T
a
current and thermal resistance.
noted)
•
Low profile surface mounted application in order to
optimize board space.
Parameter
Symbol
Test Condition
•
Low power loss, high efficiency.
STATIC PARAMETERS
capability, low forward voltage drop.
•
High current
•
High surge capability.
Drain-source breakdown voltage
V
(BR) DSS
V
GS
= 0V, I
D
=250µA
•
Guardring for overvoltage protection.
Zero gate voltage
high-speed switching.
I
DSS
V
DS
=24V,V
GS
= 0V
•
Ultra
drain current
silicon junction.
•
Silicon epitaxial planar chip, metal
GSS
Gate-body leakage current
I
V
GS
=±20V, V
DS
= 0V
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
•
RoHS product for packing code suffix "G"
V
Halogen free product for packing code suffix "H"
GS
=10V, I
D
=3.6A
WILLAS
FM120-M
SE3406
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
Min
Typ
Max
0.146(3.7)
0.130(3.3)
Units
0.012(0.3) Typ.
30
1
±100
1
3
65
105
3
0.031(0.8) Typ.
V
0.071(1.8)
0.056(1.4)
µA
nA
V
Drain-source on-resistance
(note 2)
Mechanical data
R
DS(on)
mΩ
mΩ
0.040(1.0)
0.024(0.6)
V
GS
=4.5V, I
D
=2.8A
V
DS
=5V, I
D
=3.6A
•
Epoxy : UL94-V0 rated
Forward tranconductance
(note 2)
flame retardant
g
FS
Diode forward voltage
DYNAMIC PARAMETERS
(note 3)
S
Method 2026
Input capacitance
: Indicated by cathode band
C
iss
•
Polarity
Output capacitance
Position : Any
•
Mounting
C
oss
ina
ry
V
DS
=15V,V
GS
=0V,f =1MHz
V
GS
=10V,V
DS
=15V,
20
14
30
21
30
•
Case : Molded plastic, SOD-123H
V
I
S
=1A
SD
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
1
0.031(0.8) Typ.
V
pF
Dimensions in inches and
375
(millimeters)
57
39
6
pF
pF
Ω
•
Weight : Approximated 0.011 gram
rss
Reverse transfer capacitance
C
Gate resistance
R
g
V
DS
=0V,V
CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL
GS
=0V,f =1MHz
Single phase half
Turn-on delay time
wave, 60Hz, resistive of inductive load.
t
d(on)
im
t
r
t
d(off)
t
f
SWITCHING PARAMETERS
(note 3)
unless otherwise specified.
Ratings at 25℃ ambient temperature
Turn-on rise time
For capacitive load, derate current by 20%
RATINGS
4.6
1.9
ns
ns
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Pr
el
Turn-off delay time
Marking Code
Notes :
1.
R
L
=2.2Ω,R
GEN
=3Ω
12
13
Maximum Recurrent Peak Reverse Voltage
Turn-off fall time
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
14
40
28
40
15
50
35
50
16
60
42
60
20.1
18
2.6
80
56
80
10
ns
100
ns
70
100
115
150
105
150
120
200
140
200
2.
Pulse Test : Pulse width
≤300µs,
duty cycle≤ 0.5%.
3.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Average Forward Rectified Current
Repetitive Rating : Pulse width limited by maximum junction temperature.
I
FSM
20
These parameters have no way to verify.
1.0
30
40
120
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
PACKAGE
SE3406
THRU
FM1200-M
Pb Free Produ
Features
Package outline
Outline Drawing
.063(1.60)
.047(1.20)
.122(3.10)
•
Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
Method 2026
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-123H
0.040(1.0)
0.024(0.6)
na
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
20
I
O
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
im
i
V
RRM
V
RMS
V
DC
I
FSM
R
ΘJA
C
J
T
J
TSTG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Pr
el
Maximum Recurrent Peak Reverse Voltage
16
60
42
60
1.0
30
.008(0.20)
18
10
80
100
80
100
.083(2.10)
115
150
105
150
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
ry
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.003(0.08)
56
70
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
.004(0.10)MAX.
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
Dimensions in inches and (millimeters)
2012-06
.055(1.40)
.035(0.89)
I
R
WILLAS ELECTRONIC CO
Rev.D
2012-10
WILLAS ELECTRONIC CORP.
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