电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SB170

产品描述1 A, 70 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小179KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
下载文档 选型对比 全文预览

SB170概述

1 A, 70 V, SILICON, SIGNAL DIODE

文档预览

下载PDF文档
SB120-SB1A0
Schottky Barrier Rectifiers
VOLTAGE RANGE: 20 ---
100
V
CURRENT: 1.0 A
DO - 41
Features
xxxx
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB
120
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125℃
(see fig.1)
SB
130
30
21
30
SB
140
40
28
40
SB
150
50
35
50
SB
160
60
42
60
1.0
SB
170
70
49
70
SB
180
80
56
80
SB
190
90
63
90
SB
UNITS
1A0
100
70
100
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
I
FSM
40.0
A
Maximum instantaneous forward voltage
@ 1.0A
Maximum reverse current
@T
A
=25℃
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.5
0.7
0.5
0.85
V
mA
pF
℃/W
at rated DC blocking voltage @T
A
=100℃
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
10.0
110
50
- 55 --- + 125
5.0
80
- 55 --- + 150
- 55 --- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
http://www.luguang.cn
mail:lge@luguang.cn

SB170相似产品对比

SB170 SB180 SB190 SB1A0 SB120 SB130 SB140 SB150 SB160
描述 1 A, 70 V, SILICON, SIGNAL DIODE 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 90 V, SILICON, SIGNAL DIODE, DO-41 1 A, 70 V, SILICON, SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2774  414  2434  906  1418  13  49  26  57  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved