Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・
・With
TO-66 package
・Low
collector-emitter saturation voltage
・Excellent
safe operating area
・2N4900
complement to type 2N4912
APPLICATIONS
・Designed
for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N4898 2N4899 2N4900
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N4898
V
CBO
Collector-base voltage
2N4899
2N4900
2N4898
V
CEO
Collector-emitter voltage
2N4899
2N4900
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
1.0
4.0
1.0
25
150
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
7.0
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N4898
V
CEO(sus)
Collector-emitter
sustaining voltage
2N4899
2N4900
V
CEsat
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N4898
I
CEO
Collector cut-off current
2N4899
2N4900
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=1A; I
B
=0.1A
I
C
=1A ;I
B
=0.1A
I
C
=1A ; V
CE
=1V
V
CE
=20V; I
B
=0
V
CE
=30V; I
B
=0
V
CE
=40V; I
B
=0
I
C
=0.1A ;I
B
=0
2N4898 2N4899 2N4900
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
0.6
1.3
1.3
V
V
V
0.5
mA
V
CE
=Rated V
CEO
; V
BE(off)
=1.5V
T
C
=150℃
V
CB
=Rated V
CBO
; I
E
=0
V
EB
=5V; I
C
=0
I
C
=50mA ; V
CE
=1V
I
C
=500mA ; V
CE
=1V
I
C
=1.0A ; V
CE
=1V
I
E
=0;V
CB
=10V;f=1MHz
I
C
=250mA;V
CE
=10V
3.0
40
20
10
0.1
1.0
0.1
1.0
mA
mA
mA
100
100
pF
MHz
JMnic
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