SKM100GAR101D,SKM100GAR101D pdf中文资料,SKM100GAR101D引脚图,SKM100GAR101D电路-Datasheet-电子工程世界

Datasheet> 器件分类 > 分立半导体> 晶体管> SKM100GAR101D

SKM100GAR101D: 产品描述Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel; 产品类别分立半导体晶体管; 文件大小323KB，共8页; 制造商SEMIKRON; 官网地址http://www.semikron.com

下载文档详细参数选型对比全文预览

SKM100GAR101D概述

Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel

SKM100GAR101D规格参数

参数名称	属性值
厂商名称	SEMIKRON
包装说明	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
外壳连接	ISOLATED
最大集电极电流 (IC)	100 A
集电极-发射极最大电压	1000 V
配置	SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值	6.5 V
门极-发射极最大电压	20 V
JESD-30 代码	R-PUFM-X7
元件数量	1
端子数量	7
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
功耗环境最大值	625 W
最大功率耗散 (Abs)	625 W
认证状态	Not Qualified
表面贴装	NO
端子形式	UNSPECIFIED
端子位置	UPPER
晶体管应用	MOTOR CONTROL
晶体管元件材料	SILICON
标称断开时间 (toff)	350 ns
标称接通时间 (ton)	100 ns
VCEsat-Max	4 V

SKM100GAR101D相似产品对比

	SKM100GAR101D	SKM100GB122D	SKM100GAR121D	SKM100GB121D	SKM100GAL121D	SKM100GAR122D	SKM100GAL101D	SKM100GB101D
描述	Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel,
包装说明	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
最大集电极电流 (IC)	100 A	100 A	100 A	100 A	100 A	100 A	100 A	100 A
集电极-发射极最大电压	1000 V	1200 V	1200 V	1200 V	1200 V	1200 V	1000 V	1000 V
配置	SINGLE WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
门极发射器阈值电压最大值	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V
门极-发射极最大电压	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
JESD-30 代码	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7
元件数量	1	2	1	2	1	1	1	2
端子数量	7	7	7	7	7	7	7	7
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	625 W	1250 W	625 W	1250 W	625 W	625 W	625 W	1250 W
最大功率耗散 (Abs)	625 W	625 W	625 W	625 W	625 W	625 W	625 W	625 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
端子位置	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
晶体管应用	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称断开时间 (toff)	350 ns	350 ns	350 ns	350 ns	350 ns	350 ns	350 ns	350 ns
标称接通时间 (ton)	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns
VCEsat-Max	4 V	4 V	4 V	4 V	4 V	4 V	4 V	4 V
厂商名称	SEMIKRON	-	-	-	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON

推荐资源

EE TALK——扒一扒你身边的智能家居/可穿戴: [align=left][font=微软雅黑][size=3]智能家居的风刮了又刮，可穿戴的概念也火了这两年，作为寻常百姓，他们真的走进你的生活了吗？[/size][/font][/align][align=left][font=微软雅黑][size=3]本期EETALK话题：[b]扒一扒你身边的智能家居/可穿戴，欢迎大家跟帖，分享你对这个问题的看法。[/b][/size][/font][/ali...; eric_wang 移动便携

提问+现在企业用TI的多还是PIC的多: [i=s] 本帖最后由孟令民于 2014-2-28 13:46 编辑 [/i]现在企业用TI的多还是PIC的多，个人比较倾向于低功耗的MSP430.PIC的接触不多，不是很了解，特发此贴与大家讨论下。...; 孟令民微控制器 MCU

threadx queue的一个坑，同时也注意硬汉教程的一个错误: 前几天用threadx queue，仔细看一下，函数原型是UINT tx_queue_create(TX_QUEUE *queue_ptr,CHAR *name_ptr,UINT message_size,VOID *queue_start,ULONG queue_size);message_size：指定队列中每条消息的大小。消息大小从 1 个 32 位字到 16 个 32 位字不等。有效的...; freebsder 嵌入式系统

求教什么地方有基于ARM9嵌入式LINUX系统下的彩信收发开发包?价格多少?: 同标题...; dongyun197 Linux与安卓

天马全系列液晶屏规格书大放送--屏库上是需要花钱下载的哦: 详细见附件...; xiaochuan610 综合技术交流

FPGA综合仿真错误: Error: Design requires 1087 I/O resources -- too many to fit in 314 available in the selected device or any device in the device familyError: Cannot find device that meets Compiler settings specificat...; jxixian 嵌入式系统

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多