BZM55C Series
Surface Mount Zener Diodes
P b
Lead(Pb)-Free
Features:
*500mw Power Dissipation
*General Purpose
*Ideal for Surface Mountted Application
SMALL SIGNAL
ZENER DIODES
0.5 WATTS
Mechanical Data:
*Case : MICRO-MELF Glass Case
*Weight : Approx 0.01g
MICRO-MELF
MICRO-MELF Outline Dimensions
Unit:mm
A
B
C
MICRO-MELF
Dim
A
B
C
Min
2.5
R≥ ass
Gl
2.0
1.20
1.35
Max
1.8
1.30
1.35
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BZM55C Series
Characteristics
Power Dissipation, R
θJA
≤300˚C/W
Z-Current
Thermal Resistance Junction to Ambient
(1)
Forward Voltage @ IF=200mA
Operation Junction Temperature Range
Storage Temperature Range
Note: 1.On pc board 50 mm x 50mm x 1.6mm
WEITRON
Symbol
P
D
I
Z
RθJA
V
F
T
J
T
STG
Maximum Ratings and Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
Value
500
P
D
/V
Z
500
1.5
175
-65 to+175
Unit
mW
mA
˚C/W
V
C
C
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BZM55C Series
Electrical Characteristics
Type
BZM55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
Tighter
WEITRON
(T
A
=25 C unless otherwise noted, V
F
=1.5 V Max. @I
F
=200mA for all types)
V
Znom
I
ZT
for V
ZT
and
V
mA
V
1)
2.4
5
2.28 to 2.56
2.7
5
2.5 to 2.9
3.0
5
2.8 to 3.2
3.3
5
3.1 to 3.5
3.6
5
3.4 to 3.8
3.9
5
3.7 to 4.1
4.3
5
4.0 to 4.6
4.7
5
4.4 to 5.0
5.1
5
4.8 to 5.4
5.6
5
5.2 to 6.0
6.2
5
5.8 to 6.6
6.8
5
6.4 to 7.2
7.5
5
7.0 to 7.9
8.2
5
7.7 to 8.7
9.1
5
8.5 to 9.6
10
5
9.4 to 10.6
11
5
10.4 to 11.6
12
5
11.4 to 12.7
13
5
12.4 to 14.1
15
5
13.8 to 15.6
16
5
15.3 to 17.1
18
5
16.8 to 19.1
20
5
18.8 to 21.2
22
5
20.8 to 23.3
24
5
22.8 to 25.6
27
5
25.1 to 28.9
30
5
28 to 32
33
5
31 to 35
36
5
34 to 38
39
2.5
37 to 41
43
2.5
40 to 46
47
2.5
44 to 50
51
2.5
48 to 54
56
2.5
52 to 60
62
2.5
58 to 66
68
2.5
64 to 72
75
2.5
70 to 79
r
zjT
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
r
zjk
at I
ZK
mA
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 550
1
< 450
1
< 200
1
< 150
1
< 50
1
< 50
1
< 50
1
< 70
1
< 70
1
< 90
1
< 110
1
< 110
1
< 170
1
< 170
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 500
1
< 600
0.5
< 700
0.5
< 700
0.5
< 1000
0.5
< 1000
0.5
< 1000
0.5
< 1500
0.5
I
R
and
A
< 100
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
I
R
at V
R
A
2)
V
< 50
1
< 50
1
< 40
1
< 40
1
< 40
1
< 40
1
< 20
1
< 10
1
<2
1
<2
1
<2
2
<2
3
<2
5
<2
6.2
<2
6.8
<2
7.5
<2
8.2
<2
9.1
<2
10
<2
11
<2
12
<2
13
<2
15
<2
16
<2
18
<2
20
<2
22
<2
24
<2
27
<5
30
<5
33
<5
36
< 10
39
< 10
43
< 10
47
< 10
51
< 10
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
tolerances available request:
BZM55A... ±1% OF V
Znom
BZM55B... ±2% OF V
Znom
BZM55F... ±3% OF V
Znom
at T
j
= 150 C
2)
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BZM55C Series
Characteristics(T
A
=25˚C unless otherwise specified)
P
tot
– Total Power Dissipation ( mW )
600
500
400
300
200
100
0
V
Ztn
– Relative Voltage Change
1.3
1.2
1.1
1.0
0.9
0.8
–60
V
Ztn
=V
Zt
/V
Z
(25°C)
TK
VZ
=10
WEITRON
10
–4
/K
8
6
4
2
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
0
–2 10
–4
/K
–4
10
–4
/K
0
40
80
120
160
200
0
60
120
180
240
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Fig.1 Total Power Dissipation vs.
Ambient Temperature
1000
V – Voltage Change ( mV )
Z
Fig.2 Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
T
j
= 25°C
100
10
5
I
Z
=5mA
0
I
Z
=5mA
10
1
–5
0
5
10
15
20
25
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig.3 Typical Change of Working Voltage
under Operating Conditions at T
amb
=25 C
Fig.4 Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
150
V
R
= 2V
100
T
j
= 25°C
50
0
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Fig.5 Diode Capacitance vs. Z–Voltage
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BZM55C Series
100
I
F
– Forward Current ( mA )
10
1
0.1
0.01
0.001
T
j
= 25˚C
50
40
30
20
10
0
WEITRON
0
0.2
0.4
0.6
0.8
1.0
I
Z
– Z-Current ( mA )
P
tot
=500mW
T
amb
=25°C
15
20
25
30
35
Fig.6 Forward Current vs. Forward Voltage
100
80
60
40
20
0
r
Z
– Differential Z-Resistance (
)
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
1000
I
Z
– Z-Current ( mA )
P
tot
=500mW
T
amb
=25°C
I
Z
=1mA
100
5mA
10 10mA
0
4
8
12
16
20
1
T
j
= 25°C
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (˚C / W )
Figure 9. Differential Z–Resistance vs. Z–Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
0.1
1
10
t
p
– Pulse Length ( ms )
t
p
/T=0.02
t
p
/T=0.01
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
100
R
thJA
=300˚C/W
T=T
jmax
–T
amb
T/Z
thp
)
1/2
)/(2r
zj
)
Figure 10. Thermal Response
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Microchip MCU
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