IRFY340EB: 产品描述Power Field-Effect Transistor, 6.9A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB; 产品类别分立半导体晶体管; 文件大小145KB，共7页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRFY340EB概述

Power Field-Effect Transistor, 6.9A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

IRFY340EB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	6.9 A
最大漏源导通电阻	0.63 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-257AB
JESD-30 代码	S-MSFM-P3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
功耗环境最大值	60 W
最大脉冲漏极电流 (IDM)	27 A
认证状态	Not Qualified
参考标准	CECC
表面贴装	NO
端子面层	TIN LEAD
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	137 ns
最大开启时间（吨）	117 ns

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PD - 94189

POWER MOSFET

THRU-HOLE (TO-257AA)

Product Summary

Part Number

IRFY340

IRFY340M

IRFY340,IRFY340M

400V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

0.55

Ω

0.55

Ω

8.7A

Eyelets

Glass

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET

transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Glass Eyelets

For Space Level Applications

Refer to Ceramic Version Part

Numbers IRFY340C, IRFY340CM

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

8.7

5.5

100

0.8

±20

520

8.7

4.0

-55 to 150

Units

W/°C

V/ns

300(0.063in./1.6mm from case for 10 sec)

3.3 (Typical)

www.irf.com

4/18/01

IRFY340EB

IRFY340EB概述

IRFY340EB规格参数

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