128KX8 STANDARD SRAM, 8ns, PDSO32, TSOP2-32
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | TSOP2 |
| 包装说明 | TSOP2-32 |
| 针数 | 32 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.2.B |
| 最长访问时间 | 8 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-G32 |
| JESD-609代码 | e0 |
| 长度 | 20.95 mm |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 128KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSOP2 |
| 封装等效代码 | TSOP32,.46 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.2 mm |
| 最大待机电流 | 0.005 A |
| 最小待机电流 | 3 V |
| 最大压摆率 | 0.16 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 10.16 mm |
| IS63LV1024-8T | IS63LV1024-10JI | IS63LV1024-12KI | IS63LV1024-15J | IS63LV1024-10TI | IS63LV1024-10K | |
|---|---|---|---|---|---|---|
| 描述 | 128KX8 STANDARD SRAM, 8ns, PDSO32, TSOP2-32 | Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32 | Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32 | Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, TSOP2-32 | Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, MS-027, SOJ-32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | TSOP2 | SOJ | SOJ | SOJ | TSOP2 | SOJ |
| 包装说明 | TSOP2-32 | 0.300 INCH, PLASTIC, SOJ-32 | 0.400 INCH, PLASTIC, SOJ-32 | 0.300 INCH, PLASTIC, SOJ-32 | TSOP2-32 | 0.400 INCH, PLASTIC, MS-027, SOJ-32 |
| 针数 | 32 | 32 | 32 | 32 | 32 | 32 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
| 最长访问时间 | 8 ns | 10 ns | 12 ns | 15 ns | 10 ns | 10 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-G32 | R-PDSO-J32 | R-PDSO-J32 | R-PDSO-J32 | R-PDSO-G32 | R-PDSO-J32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 20.95 mm | 20.955 mm | 20.955 mm | 20.955 mm | 20.95 mm | 20.95 mm |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C |
| 组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSOP2 | SOJ | SOJ | SOJ | TSOP2 | SOJ |
| 封装等效代码 | TSOP32,.46 | SOJ32,.34 | SOJ32,.44 | SOJ32,.34 | TSOP32,.46 | SOJ32,.44 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.2 mm | 3.556 mm | 3.7592 mm | 3.556 mm | 1.2 mm | 3.75 mm |
| 最大待机电流 | 0.005 A | 0.01 A | 0.01 A | 0.005 A | 0.01 A | 0.01 A |
| 最小待机电流 | 3 V | 3.15 V | 3.15 V | 3 V | 3.15 V | 2 V |
| 最大压摆率 | 0.16 mA | 0.16 mA | 0.14 mA | 0.12 mA | 0.16 mA | 0.15 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.45 V | 3.45 V | 3.6 V | 3.45 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3.15 V | 3.15 V | 3 V | 3.15 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | J BEND | J BEND | J BEND | GULL WING | J BEND |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 10.16 mm | 7.62 mm | 10.16 mm | 7.62 mm | 10.16 mm | 10.16 mm |
| 是否无铅 | 含铅 | 含铅 | 含铅 | - | 含铅 | 含铅 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 湿度敏感等级 | 3 | 3 | 3 | - | 3 | 3 |
| 端口数量 | - | 1 | 1 | 1 | 1 | 1 |
| 可输出 | - | YES | YES | YES | YES | YES |
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