FIG. AMBIENT RS1A-RS1G
PHASE
125
WAVE 60Hz
175
1 –
25°C
TEMPERATURE (℃)
FORWARD
SINGLE
20
HALF
150 100
RS1J-SR1M
1 MHz
10
1 25
TJ =
50
f
4
=
75
CURRENT DERATING CURVE
100
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.8
0.00
2
0.2 0.4 0.6
10
HYESD2045FN2
Single Channel Low Capacitance ESD Protection Diode Array
HYESD2045FN2 is a single-channel ultra low capacitance rail clamp ESD protection diode array which
includes surge rated to protect high speed data lines. Each channel consists of a pair of ESD diodes that
steer positive or negative ESD current to either the positive or negative rail. Typical application, the
negative rail pin is connected with system ground. The Positive ESD current is steered to the ground
through the internal zener diode to protect the power supply of the circuit protected.
FEATURES
• Single Channel ESD protection
• Provides ESD protection to IEC61000-4-2 level 4
- + 15KV Air Discharge
- + 10KV Contact Discharge
• Ultra low capacitance 0.9pF ( Max )
• Low clamping voltage & 5V operation voltage
APPLICATION
• Cellular Handsets & Accessories
• Digital Cameras
• Flat Panel Monitors / TVs
• Cellular Handsets & Accessories
• Notebooks
MECHANICAL INFORMATION
• Case : DFN-2-1.0x0.6x0.5 Package
• Pb-Free, Halogen Free, RoHS/WEEE Complian
HYESD2045FN2
DFN-2
PIN CONFIGURATION
1
2
REV. 0.9, 16-May-2012
HYESD2045FN2
Maximum Rating and Thermal Characteristics ( T
C
=25℃ )
Parameter
Peak Pulse Power(8/20μs)
Peak Pulse Current(8/20μs)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
P
PP
I
PP
V
ESD
V
ESD
T
op
T
stg
Value
120
5
+15KV
+10KV
-55 to +125
-55 to +150
Unit
W
A
V
V
℃
℃
Electrical Characteristics ( T
C
=25℃, unless otherwise noted )
Parameter
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Symbol
Test Condition
I
BR
=1mA;
I/O pin to GND
V
RWM
=5V, T=25°C;
I/O pin to GND
I
PP
=1A, t
P
=8/20us;
Positive pulse;
I/O pin to GND
I
PP
=1A, t
P
=8/20us;
Negative pulse;
I/O pin to GND
V
R
=0V, f=1MHz;
I/O pin to GND
Min
-
6
-
Typ
-
-
-
Max
5
Unit
V
V
V
RWM
I/O pin to GND
V
BR
I
R
1
uA
Positive Clamping Voltage
V
C
-
8.5
12
V
Negative Clamping Voltage
V
C
-
1.8
-
V
Junction Capacitance
Between I/O And GND
C
J
-
0.5
0.9
pF
REV. 0.9, 16-May-2012
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