NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very
small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
drain-source on-state
resistance
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 350 mA;
T
j
= 25 °C
V
GS
= -4.5 V;
I
D
= -200 mA; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
V
GS
= -4.5 V; T
amb
= 25 °C
T
j
= 25 °C
[1]
Min
-
-8
-
-
-8
-
-
Typ
-
-
-
-
-
-
1
Max
-30
8
-200
30
8
350
1.4
Unit
V
V
mA
V
V
mA
Ω
TR2 (P-channel)
TR1 (N-channel)
TR1 (N-channel), Static characteristics
TR2 (P-channel), Static characteristics
R
DSon
-
2.8
4.1
Ω
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
1
2
3
G1
G2
Simplified outline
6
5
4
Graphic symbol
D1
D2
SOT363 (SC-88)
S1
S2
017aaa262
3. Ordering information
Table 3.
Ordering information
Package
Name
NX3008CBKS
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
LD%
Type number
NX3008CBKS
[1]
% = placeholder for manufacturing site code.
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
2 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
TR1 (N-channel)
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
Per device
P
tot
T
j
T
amb
T
stg
I
S
I
S
V
ESD
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
-
-8
-
-
-
-
-
-
[2]
Max
-30
8
-200
-125
-0.8
280
320
990
30
8
350
230
1.4
280
320
990
445
150
150
150
300
-200
2000
2000
Unit
V
V
mA
mA
A
mW
mW
mW
V
V
mA
mA
A
mW
mW
mW
mW
°C
°C
°C
mA
mA
V
V
TR2 (P-channel)
T
j
= 25 °C
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
source current
electrostatic discharge voltage
electrostatic discharge voltage
T
amb
= 25 °C
-
-55
-55
-65
TR1 (N-channel), Source-drain diode
T
amb
= 25 °C
T
amb
= 25 °C
HBM
HBM
[1]
-
-
-
-
TR2 (P-channel), Source-drain diode
[1]
TR1 N-channel), ESD maximum rating
[3]
TR2 (P-channel), ESD maximum rating
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Measured between all pins.
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
3 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
120
P
der
(%)
80
001aao121
120
I
der
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
T
j
(°C)
175
0
-75
-25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
10
l
D
(A)
1
Fig 2.
Normalized continuous drain current as a
function of junction temperature
001aao251
(1)
10
-1
(2)
(3)
(4)
(5)
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Fig 3.
Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
4 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
-10
l
D
(A)
-1
001aao253
(1)
-10
-1
(2)
(3)
(4)
-10
-2
-10
-1
(5)
-1
-10
V
DS
(V)
-10
2
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Fig 4.
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
R
th(j-a)
R
th(j-sp)
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to ambient
thermal resistance from junction to solder point
thermal resistance from junction to ambient
thermal resistance from junction to solder point
in free air
[1]
[2]
Conditions
in free air
in free air
[1]
Min
-
-
-
-
-
-
-
Typ
-
390
340
-
390
340
-
Max
300
445
390
130
445
390
130
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
TR1 (N-channel)
[1]
[2]
TR2 (P-channel)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
5 of 21
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