Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
参数名称 | 属性值 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | TSOP2 |
包装说明 | TSOP2, |
针数 | 32 |
Reach Compliance Code | unknown |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 100 ns |
JESD-30 代码 | R-PDSO-G32 |
长度 | 20.95 mm |
内存密度 | 4194304 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 512KX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSOP2 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
最大供电电压 (Vsup) | 2.7 V |
最小供电电压 (Vsup) | 2.3 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
宽度 | 10.16 mm |
K6T4008S1C-VF10 | K6T4008S1C-YF10 | K6T4008S1C-VF12 | K6T4008S1C-TF10 | K6T4008S1C-TF12 | K6T4008S1C-YF12 | K6T4008S1C-MF12 | K6T4008S1C-MF10 | |
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描述 | Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 | Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 | Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 | Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 | Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
零件包装代码 | TSOP2 | TSOP1 | TSOP2 | TSOP1 | TSOP1 | TSOP1 | TSOP2 | TSOP2 |
包装说明 | TSOP2, | TSOP1, | TSOP2, | TSOP1, | TSOP1, | TSOP1, | TSOP2-R, | TSOP2-R, |
针数 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 100 ns | 100 ns | 120 ns | 100 ns | 120 ns | 120 ns | 120 ns | 100 ns |
JESD-30 代码 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 | R-PDSO-G32 |
长度 | 20.95 mm | 11.8 mm | 20.95 mm | 18.4 mm | 18.4 mm | 11.8 mm | 20.95 mm | 20.95 mm |
内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSOP2 | TSOP1 | TSOP2 | TSOP1 | TSOP1 | TSOP1 | TSOP2-R | TSOP2-R |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
最大供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
最小供电电压 (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 1.27 mm | 0.5 mm | 1.27 mm | 0.5 mm | 0.5 mm | 0.5 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 10.16 mm | 8 mm | 10.16 mm | 8 mm | 8 mm | 8 mm | 10.16 mm | 10.16 mm |
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