MGA-633P8
Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-633P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise and high linearity achieved through the use of
Avago Technologies’ proprietary 0.25um GaAs Enhance-
ment-mode pHEMT process. It is housed in a miniature
2.0 x 2.0 x 0.75mm
3
8-pin Quad-Flat-Non-Lead (QFN)
package. It is designed for optimum use from 450MHz up
to 2GHz. The compact footprint and low profile coupled
with low noise, high gain and high linearity make the
MGA-633P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at higher frequency from 1.5GHz to 2.3GHz,
the MGA-634P8 is recommended, and from 2.3GHz to
4GHz, the MGA-635P8 is recommended. Both MGA-634P8
and MGA-635P8 share the same package and pinout as
MGA-633P8
Features
Ultra Low noise Figure
High linearity performance
GaAs E-pHEMT Technology
[1]
Low cost small package size: 2.0 x 2.0 x 0.75 mm
3
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
Specifications
900MHz; 5V, 54mA
18 dB Gain
0.37 dB Noise Figure
15dB Input Return Loss
37 dBm Output IP3
22 dBm Output Power at 1dB gain compression
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm
3
8-lead QFN
[1]
[2]
[3]
[4]
[8]
[7]
[6]
[5]
[8]
[7]
[6]
[5]
Bottom View
Pin5 – Not Used
Pin6 – Not Used
Pin7 – RFoutput / Vdd
Pin8 – Not Used
Centre tab - Ground
Applications
[1]
[2]
[3]
[4]
Low noise amplifier for cellular infrastructure for GSM
and CDMA.
Other ultra low noise application.
33X
Top View
–
–
–
–
Vbias
RFinput
Not Used
Not Used
Simplified Schematic
Vdd
Rbias
C5
C3
RFin
C1
L1
[1]
[2]
[3]
[4]
bias
Pin1
Pin2
Pin3
Pin4
R1
R2
L2
[8]
[7]
[6]
[5]
C6
C4
C2
RFout
Note:
Package marking provides orientation and identification
“33” = Device Code
“X” = Month Code
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V (Class A)
ESD Human Body Model = 600 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Notes:
The schematic is shown with the assumption that similar PCB is used
for all MGA-633P8, MGA-634P8 and MGA-635P8.
Detail of the components needed for this product is shown in Table 1.
Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Good RF practice requires all unused pins to be earthed.
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol
V
dd
I
dd
P
max
P
diss
T
j
T
STG
Thermal Resistance
Units
V
mA
dBm
W
°C
°C
Parameter
Device Voltage, RF output to ground
Drain Current
CW RF Input Power
(V
dd
= 5.0 V, I
dd
= 54 mA)
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Absolute Max.
5.5
90
+20
0.495
150
-65 to 150
Thermal Resistance
[2]
(V
dd
= 5.0 V, I
dd
= 54 mA),
jc
= 72°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique.
3. Power dissipation with unit turned on.
Board temperature T
B
is 25°C. Derate at
13.89mW/°C for T
B
>114°C.
Electrical Specifications
[1, 4]
RF performance at T
A
= 25°C, V
dd
=5V, R
bias
=6.8kOhm, 900MHz, measured on demo board in Figure 5 with component
list in Table1 for 900 MHz matching.
Symbol
I
dd
Gain
OIP3
[2]
NF
[3]
OP1dB
IRL
ORL
REV ISOL
Parameter and Test Condition
Drain Current
Gain
Output Third Order Intercept Point
Noise Figure
Output Power at 1dB Gain Compression
Input Return Loss, 50 source
Output Return Loss, 50 load
Reverse Isolation
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
Min.
39
16.5
34
Typ.
54
18
37
0.37
22
15
21
21
Max.
67
19.5
0.6
Notes:
1. Measurements at 900 MHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F
RF1
= 900 MHz, F
RF2
= 901 MHz with input power of -15dBm per tone.
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2
Product Consistency Distribution Charts
[1, 2]
LSL
Id
Max:67
Min:39
Mean:54
USL
Noise Figure
Max:0.6
Mean:0.37
USL
38 40 42 44 46 48 50 52 54 56 58 60 62 64 66
Figure 1. Id @ 900MHz, 5V, 54mA
Mean = 54
0.3
0.4
0.5
0.6
Figure 2. Noise Figure @ 900MHz, 5V, 54mA
Mean = 0.37
LSL
OIP3
Min:34
Mean:37
LSL
Gain
Max:19.5
Min:16.5
Mean:18
USL
34
35
36
37
38
39
16.5
17
17.5
18
17.5
19
19.5
Figure 3. OIP3 @ 900MHz, 5V, 54mA
Mean = 37
Figure 4. Gain @ 900MHz, 5V, 54mA
Mean = 18
Notes:
1. Distribution data samples are 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
2. Circuit Losses have not been de-embedded from the actual measurements.
3
Demo Board Layout
Demo Board Schematic
Vdd
Rbias
C5
C3
RFin
C1
L1
[1]
[2]
[3]
[4]
bias
R1
R2
L2
[8]
[7]
[6]
[5]
C6
C4
C2
RFout
Figure 5. Demo Board Layout Diagram
– Recommended PCB material is 10 mils Rogers RO4350.
– Suggested component values may vary according to layout and PCB
material.
Figure 6. Demo Board Schematic Diagram
Note:
The schematic is shown with the assumption that similar PCB is used
for all MGA-633P8, MGA-634P8 and MGA-635P8.
Detail of the components needed for this product is shown in Table 1.
Table 1. Component list for 900 MHz matching
Part
C1, C2
L1, L2
C4
C3, C6
R1
R2
Size
0402
0402
0402
0402
0402
0402
Value
100pF (Murata)
33nH (Toko)
33pF (Koacera)
4.7uF (Murata)
0 Ohm (Kamaya)
10 Ohm (Koa)
Detail Part Number
GRM1555C1H101JD01E
LL1005-FHL33NJ
CM05CH330J50AH
GRM155R60E475ME760
RMC1/16S-JPTH
RM73B1ETTP100J
Note:
C1, C2 are DC Blocking capacitors; L1 input match for NF; L2 output match for OIP3; C3, C4, C6 are bypass capacitors; R2 is stabilizing resistor;
Rbias is the biasing resistor; R1, C5 are not use for this product
4
MGA-633P8 Typical Performance
RF performance at T
A
= 25°C, Vdd = 5V, Id = 54mA, measured using 50ohm input and output board, unless otherwise stated.
OIP3 test condition: F
RF1
= 900 MHz, F
RF2
= 901 MHz with input power of -10dBm per tone.
0.5
0.4
Fmin (dB)
0.3
0.2
0.1
0
Fmin (dB)
0.5
0.4
0.3
0.2
0.1
0
40
50
55
Idd (mA)
70
80
40
50
55
Idd (mA)
70
80
Figure 7. Fmin vs Idd at 5V at 700MHz
Figure 8. Fmin vs Idd at 5V at 900MHz
20
19
Gain (dB)
Gain (dB)
40
55
Idd(mA)
Figure 10. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
70
80
18
17
16
15
20
19
18
17
16
15
40
55
Idd(mA)
70
80
Figure 11. Gain vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
45
44
43
42
41
40
39
38
37
36
35
40
55
Idd(mA)
70
80
45
44
43
42
41
40
39
38
37
36
35
OIP3(dBm)
OIP3(dBm)
40
55
Idd(mA)
70
80
Figure 12. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 700MHz
Figure 13. OIP3 vs Idd at 5V Tuned for Optimum OIP3 and Fmin at 900MHz
5
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