128KX8 STANDARD SRAM, 25ns, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP32,.4 |
| 针数 | 32 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A001.A.2.C |
| Factory Lead Time | 1 week |
| 最长访问时间 | 25 ns |
| 其他特性 | LOW POWER STANDBY MODE |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDIP-T32 |
| 长度 | 40.645 mm |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 128KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP32,.4 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 4.57 mm |
| 最大待机电流 | 0.002 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.14 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 10.16 mm |
| SMJ5C1008-25JDCM | SMJ5C1008-25HMMT | SMJ5C1008-20HMMT | SMJ5C1008-20HMM | SMJ5C1008-20JDCM | SMJ5C1008-25HMM | |
|---|---|---|---|---|---|---|
| 描述 | 128KX8 STANDARD SRAM, 25ns, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | 128KX8 STANDARD SRAM, 25ns, CDSO32, CERAMIC, LCC-32 | 128KX8 STANDARD SRAM, 20ns, CDSO32, CERAMIC, LCC-32 | 128KX8 STANDARD SRAM, 20ns, CDSO32, CERAMIC, LCC-32 | 128KX8 STANDARD SRAM, 20ns, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | 128KX8 STANDARD SRAM, 25ns, CDSO32, CERAMIC, LCC-32 |
| 零件包装代码 | DIP | DLCC | DLCC | DLCC | DIP | DLCC |
| 包装说明 | DIP, DIP32,.4 | SON, | SON, | SON, SOLCC32,.4 | DIP, DIP32,.4 | SON, SOLCC32,.4 |
| 针数 | 32 | 32 | 32 | 32 | 32 | 32 |
| Reach Compliance Code | not_compliant | unknown | unknown | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 25 ns | 25 ns | 20 ns | 20 ns | 20 ns | 25 ns |
| 其他特性 | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE |
| JESD-30 代码 | R-CDIP-T32 | R-CDSO-N32 | R-CDSO-N32 | R-CDSO-N32 | R-CDIP-T32 | R-CDSO-N32 |
| 长度 | 40.645 mm | 20.955 mm | 20.955 mm | 20.955 mm | 40.645 mm | 20.955 mm |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
| 字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | SON | SON | SON | DIP | SON |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.57 mm | 2.54 mm | 2.54 mm | 2.54 mm | 4.57 mm | 2.54 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
| 是否Rohs认证 | 不符合 | - | - | 不符合 | 不符合 | 不符合 |
| I/O 类型 | COMMON | - | - | COMMON | COMMON | COMMON |
| 输出特性 | 3-STATE | - | - | 3-STATE | 3-STATE | 3-STATE |
| 封装等效代码 | DIP32,.4 | - | - | SOLCC32,.4 | DIP32,.4 | SOLCC32,.4 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | - | - | 5 V | 5 V | 5 V |
| 筛选级别 | 38535Q/M;38534H;883B | - | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| 最大待机电流 | 0.002 A | - | - | 0.002 A | 0.002 A | 0.002 A |
| 最小待机电流 | 2 V | - | - | 2 V | 2 V | 2 V |
| 最大压摆率 | 0.14 mA | - | - | 0.15 mA | 0.15 mA | 0.14 mA |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
ADI 工业技术
嵌入式系统
微控制器 MCU
聊聊、笑笑、闹闹
测试/测量
单片机
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
