Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| Objectid | 2041124279 |
| 包装说明 | BGA, |
| Reach Compliance Code | unknown |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 7 ns |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B219 |
| 内存密度 | 603979776 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM |
| 内存宽度 | 72 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 219 |
| 字数 | 8388608 words |
| 字数代码 | 8000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 8MX72 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | BALL |
| 端子节距 | 1.27 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| WEDPN8M72V-100B2M | WEDPN8M72V-125B2C | WEDPN8M72V-100B2I | WEDPN8M72V-133B2I | WEDPN8M72V-133B2C | WEDPN8M72V-133B2M | WEDPN8M72V-100B2C | WEDPN8M72V-125B2I | WEDPN8M72V-125B2M | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 6ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 5.5ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 5.5ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 5.5ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 6ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 | Synchronous DRAM, 8MX72, 6ns, CMOS, PBGA219, 21 X 25 MM, PLASTIC, BGA-219 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Objectid | 2041124279 | 1820319356 | 1820319348 | 1667210512 | 1667210511 | 1667210513 | 2041124277 | 1820319357 | 2041124282 |
| 包装说明 | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, | BGA, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 7 ns | 6 ns | 7 ns | 5.5 ns | 5.5 ns | 5.5 ns | 7 ns | 6 ns | 6 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 | R-PBGA-B219 |
| 内存密度 | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 | 219 |
| 字数 | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
| 字数代码 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 70 °C | 85 °C | 85 °C | 70 °C | 125 °C | 70 °C | 85 °C | 125 °C |
| 最低工作温度 | -55 °C | - | -40 °C | -40 °C | - | -55 °C | - | -40 °C | -55 °C |
| 组织 | 8MX72 | 8MX72 | 8MX72 | 8MX72 | 8MX72 | 8MX72 | 8MX72 | 8MX72 | 8MX72 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | MILITARY | COMMERCIAL | INDUSTRIAL | MILITARY |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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