LinCMOS(TM> Precision Dual Operational Amplifier 8-SOIC 0 to 70
参数名称 | 属性值 |
Brand Name | Texas Instruments |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Texas Instruments(德州仪器) |
零件包装代码 | SOIC |
包装说明 | SOIC-8 |
针数 | 8 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 1 week |
放大器类型 | OPERATIONAL AMPLIFIER |
架构 | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB) | 0.0006 µA |
25C 时的最大偏置电流 (IIB) | 0.00006 µA |
最小共模抑制比 | 65 dB |
标称共模抑制比 | 95 dB |
频率补偿 | YES |
最大输入失调电流 (IIO) | 0.00006 µA |
最大输入失调电压 | 6500 µV |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e4 |
长度 | 4.9 mm |
低-偏置 | YES |
低-失调 | NO |
微功率 | YES |
湿度敏感等级 | 1 |
功能数量 | 2 |
端子数量 | 8 |
最高工作温度 | 70 °C |
最低工作温度 | |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOP |
封装等效代码 | SOP8,.25 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
包装方法 | TUBE |
峰值回流温度(摄氏度) | 260 |
功率 | NO |
电源 | 3/16 V |
可编程功率 | NO |
认证状态 | Not Qualified |
座面最大高度 | 1.75 mm |
最小摆率 | 0.02 V/us |
标称压摆率 | 0.04 V/us |
最大压摆率 | 0.042 mA |
供电电压上限 | 18 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
标称均一增益带宽 | 100 kHz |
最小电压增益 | 50000 |
宽带 | NO |
宽度 | 3.9 mm |
Base Number Matches | 1 |
器件名 | 厂商 | 描述 |
---|---|---|
TLC27L2ACDR | Texas Instruments(德州仪器) | LinCMOS(TM> Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
TLC27L2ACDG4 | Texas Instruments(德州仪器) | LinCMOS(TM> Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
TLC27L2ACDRG4 | Texas Instruments(德州仪器) | LinCMOS(TM> Precision Dual Operational Amplifier 8-SOIC 0 to 70 |
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TS27L2ACDT | ST(意法半导体) | |
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OPA2342UAG4 | Texas Instruments(德州仪器) | Low Cost, Low Power, Rail-to-Rail Operational Amplifiers MicroAmplifier Series 8-SOIC -40 to 85 |
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TS27L2AMDT | ST(意法半导体) | DUAL OP-AMP, 6500uV OFFSET-MAX, 0.1MHz BAND WIDTH, PDSO8, MICRO, PLASTIC, SO-8 |
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