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CY14C512I_13

产品描述512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock
文件大小2MB,共41页
制造商Cypress(赛普拉斯)
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CY14C512I_13概述

512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock

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CY14C512I
CY14B512I
CY14E512I
512-Kbit (64 K × 8) Serial (I
2
C) nvSRAM
with Real Time Clock
512-Kbit (64 K × 8) Serial (I
2
C) nvSRAM with Real Time Clock
Features
512-Kbit nonvolatile static random access memory (nvSRAM)
Internally organized as 64 K × 8
STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by using I
2
C
command (Software STORE) or HSB pin (Hardware STORE)
RECALL to SRAM initiated on power-up (Power-Up
RECALL) or by I
2
C command (Software RECALL)
Automatic STORE on power-down with a small capacitor
High reliability
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years at 85
C
Real Time Clock (RTC)
Full-featured RTC
Watchdog timer
Clock alarm with programmable interrupts
Backup power fail indication
Square wave output with programmable frequency (1 Hz,
512 Hz, 4096 Hz, 32.768 kHz)
Capacitor or battery backup for RTC
Backup current of 0.45 µA (typical)
2
[1]
High-speed I C interface
Industry standard 100 kHz and 400 kHz speed
Fast mode Plus 1 MHz speed
High speed 3.4 MHz
Zero cycle delay reads and writes
Write protection
Hardware protection using Write Protect (WP) pin
Software block protection for one-quarter, one-half, or entire
array
I
2
C access to special functions
Nonvolatile STORE/RECALL
8-byte serial number
Manufacturer ID and Product ID
Sleep mode
Low power consumption
Average active current of 1 mA at 3.4 MHz operation
Average standby mode current of 250 µA
Sleep mode current of 8 µA
Industry standard configurations
Operating voltages:
• CY14C512I: V
CC
= 2.4 V to 2.6 V
• CY14B512I: V
CC
= 2.7 V to 3.6 V
• CY14E512I: V
CC
= 4.5 V to 5.5 V
Industrial temperature
16-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Overview
The Cypress CY14C512I/CY14B512I/CY14E512I combines a
512-Kbit nvSRAM
[2]
with a full-featured RTC in a monolithic
integrated circuit with serial I
2
C interface. The memory is
organized as 64 K words of 8 bits each. The embedded
nonvolatile elements incorporate the QuantumTrap technology,
creating the world’s most reliable nonvolatile memory. The
SRAM provides infinite read and write cycles, while the
QuantumTrap cells provide highly reliable nonvolatile storage of
data. Data transfers from SRAM to the nonvolatile elements
(STORE operation) takes place automatically at power-down.
On power-up, data is restored to the SRAM from the nonvolatile
memory (RECALL operation). The STORE and RECALL
operations can also be initiated by the user through I
2
C
commands.
Logic Block Diagram
V
CC
V
CAP
V
RTCcap
V
RTCbat
Serial Number
8x8
Manufacturer ID /
Product ID
Memory Control Register
Command Register
Sleep
Quantum Trap
64 K x 8
SRAM
64 K x 8
STORE
RECALL
Power Control
Block
SDA
SCL
A2, A1, A0
WP
I C Control Logic
Slave Address
Decoder
2
Control Registers Slave
Memory Slave
RTC Slave
Memory
Address and Data
Control
X
in
INT/SQW
X
out
RTC Control Logic
Registers
Counters
Notes
1. The I
2
C nvSRAM is a single solution which is usable for all four speed modes of operation. As a result, some I/O parameters are slightly different than those on
chips which support only one mode of operation. Refer to
AN87209
for more details.
2. Serial (I
2
C) nvSRAM will be referred to as nvSRAM throughout the datasheet.
Cypress Semiconductor Corporation
Document Number: 001-64879 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 30, 2013

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