Preliminary
Datasheet
RJE0617JSP
–60V, –1.5A, P Channel Thermal FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS1070EJ0200
Rev.2.00
Jun 06, 2013
Features
•
•
•
•
•
•
•
Logic level operation (3 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Hysteresis type shut down operation.
High density mounting.
Built-in the current limitation circuit.
Power supply voltage applies 12 V.
Outline
RENESAS Package code:
PRSP0008DD-D
(Package name:
SOP-8 (FP-8DAV))
8
7
65
7
8
5
6
3
1 2
2
4
Current
Limitation
Circuit
Gate
Shut-down
Circuit
4
Gate Resistor
Temperature
Sensing
Circuit
Gate Resistor
Temperature
Sensing
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
Latch
Circuit
Latch
Circuit
1, 3
Source
2, 4
Gate
5, 6, 7, 8
Drain
MOS1
1
MOS2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
–60
Drain to source voltage
V
DSS
–16
Gate to source voltage
V
GSS
2.5
Gate to source voltage
V
GSS
Note4
–1.5
Drain current
I
D
–1.5
Body-drain diode reverse drain current
I
DR
Note 3
–1.5
Avalanche current
I
AP
Note 3
9.6
Avalanche energy
E
AR
Note 1
1
Channel dissipation
Pch
Note 2
1.5
Channel dissipation
Pch
150
Channel temperature
Tch
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation : When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
2. 2 Drive operation : When using the glass epoxy board (FR4 40
×
40
×
1.6 mm), PW
≤
10 s
3. Tch = 25°C, Rg
≥
50
Ω
4. It provides by the current limitation lower bound value.
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1070EJ0200 Rev.2.00
Jun 06, 2013
Page 1 of 7
RJE0617JSP
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Return temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 5. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Thr
Vop
I
D limt
Min
–3
—
—
—
—
—
—
—
—
–3
–1.5
Typ
—
—
—
—
—
–0.8
–0.35
175
105
—
—
Max
—
–1.2
–100
–50
–10
—
—
—
—
–12
—
Unit
V
V
µA
µA
µA
mA
mA
°C
°C
V
A
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –1.2 V, V
DS
= 0
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Channel temperature
Channel temperature
V
GS
= –12 V, V
DS
= –10 V
Note 5
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D
I
D
I
D
I
D
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
GSS
I
GSS
I
GS(OP)
I
GS(OP)
I
DSS
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
R
DS(on)
Coss
Min
–1.5
—
–1.5
–0.8
–60
–16
2.5
—
—
—
—
—
—
—
—
–2.2
1.5
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
—
2.7
445
363
272
213
Max
–12
–40
—
—
—
—
—
–100
–50
–1
100
—
—
–10
–10
–3.4
—
800
425
350
—
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
μA
V
S
mΩ
mΩ
mΩ
pF
μs
μs
μs
μs
V
ns
ms
Test Conditions
V
GS
= –3.5 V, V
DS
= –10 V
V
GS
= –1.2 V, V
DS
= –10 V
V
GS
= –12 V, V
DS
= –10 V
Note 7
I
D
= –10 mA, V
GS
= 0
I
G
= –800
μA,
V
DS
= 0
I
G
= 100
μA,
V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
GS
= –1.2 V, V
DS
= 0
V
GS
= 2.4 V, V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –48 V, V
GS
= 0
Ta = 125°C
V
DS
= –10 V, I
D
= –1 mA
I
D
= –0.75 A, V
GS
= –10 V
Note 7
I
D
= –0.4 A, V
GS
= –3V
Note 7
I
D
= –0.75 A, V
GS
= –4 V
Note 7
I
D
= –0.75 A, V
GS
= –10 V
Note 7
V
DS
= –10 V, V
GS
= 0,
f = 1MHz
V
GS
= –10 V, I
D
= –0.75 A,
R
L
= 40
Ω
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
t
d(on)
—
0.9
—
Rise time
t
r
—
3.4
—
Turn-off delay time
t
d(off)
—
3.2
—
Fall time
t
f
—
6.3
—
Body-drain diode forward voltage
V
DF
—
–0.8
—
Body-drain diode reverse
t
rr
—
70
—
recovery time
Over load shut down
—
5.4
—
t
os
Note 8
operation time
Notes: 6. Pulse test
7. Including the junction temperature rise of the over loaded condition.
I
F
= –1.5 A, V
GS
= 0
I
F
= –1.5 A, V
GS
= 0
di
F
/dt = 50 A/μs
V
GS
= –5 V, V
DD
= –16 V
R07DS1070EJ0200 Rev.2.00
Jun 06, 2013
Page 2 of 7
RJE0617JSP
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0
−100
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
Ta = 25°C
1 shot Pulse
1 Driver Operation
Maximum Safe Operation Area
Thermal shut down
operation area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
3.0
−10
2.0
1D
riv
e
rO
pe
−1
1
D
C
m
s
O
pe
ra
tio
1.0
2D
rive
rat
rO
ion
−0.1
Operation
in this area
is limited R
DS(on)
n
PW
≤
per
10
atio
s
N
n
ot
e7
0
0
50
100
150
200
−0.01
−0.01
−0.1
−1
−10
−100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 7:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
−5
−6 V
−5 V
−4
−8 V
−3
−10 V
V
GS
= −3 V
−2
−4 V
−3.5 V
−1.5
Typical Transfer Characteristics
V
DS
= −10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
−1.0
−0.5
Tc = 150°C
25°C
−40°C
−1
Pulse Test
0
−2
−4
−6
−8
−10
0
0
−1
−2
−3
−4
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
−500
Pulse Test
−400
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
10000
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
1000
V
GS
= −3 V
−10 V
100
−4 V
−300
−0.75 A
−0.4 A
−100
0
0
I
D
= −0.2 A
−200
−2
−4
−6
−8
−10
−12
10
−0.1
−1
−10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS1070EJ0200 Rev.2.00
Jun 06, 2013
Page 3 of 7
RJE0617JSP
Static Drain to Source On State Resistance
vs. Temperature
Pulse Test
−0.75 A
600
I
D
= −1.5 A
V
GS
= −3 V
−0.4 A
−0.4 A
400
−0.4 A
−0.75 A
200
−4 V I
D
= −1.5 A
−10 V
−25
0
25
50
75 100 125 150
Preliminary
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
800
100
0
−50
10
−0.1
di / dt = 50 A /μs
V
GS
= 0
−1
−10
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
V
GS
= 0
f = 1 MHz
Switching Characteristics
100
Switching Time t (μs)
10
tf
tr
Capacitance C (pF)
Coss
100
td(off)
td(on)
1
0.1
−0.1
V
GS
= −10 V, V
DD
= −30 V
PW = 300
μs,
duty ≤ 1 %
−1
−10
10
−0
−10
−20
−30
−40
−50
−60
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Gate to Source Voltage V
GS
(V)
−16
−14
−12
−10
−8
−6
−4
−2
0
0.1
1
10
100
V
DD
= −16 V
–1.5
Reverse Drain Current I
DR
(A)
–1.0
–5 V
V
GS
= 0 V
–0.5
0
–0.5
–1.0
–1.5
Source to Drain Voltage V
SD
(V)
Shutdown Time of Load-Short Test Pw (ms)
R07DS1070EJ0200 Rev.2.00
Jun 06, 2013
Page 4 of 7
RJE0617JSP
Forward transfer admittance vs.
Drain Current
Forward transfer admittance |yfs| (S)
10
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (
°C)
200
Ta = –40°C
25°C
1
180
160
150°C
140
120
100
0
I
D
= –0.2 A
V
DS
= –10 V
Pulse Test
0.1
–0.1
–1
–10
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1s
lse
pu
t
ho
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
0.0001
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
uls
e
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
0.001
1s
h
p
ot
D=
PW
T
0.0001
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
R07DS1070EJ0200 Rev.2.00
Jun 06, 2013
Page 5 of 7
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