Modular Technologies
SMART
SM536013001Q4UU
May 21, 1999
Rev 1
Revision History
•
May 21, 1999
Modified functional diagram for data I/O on page 2.
•
July, 1996
Datasheet released
.
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
1
Modular Technologies
SMART
SM536013001Q4UU
May 21, 1999
Rev 1
SM536013001Q4UU
4MByte (1M x 36) CMOS DRAM Module - Quad CAS DRAM based
General Description
The SM536013001Q4UU is a high performance,
4-megabyte dynamic RAM module organized as 1M
words by 36 bits, in a 72-pin, leadless, single-in-line
memory module (SIMM) package. The module supports
1K Refresh.
The module utilizes two CMOS 1Mx16 and one 1Mx4
Quad CAS dynamic RAMs in surface mount package on
an epoxy laminate substrate. Each device is accompanied
by decoupling capacitors for improved noise immunity.
Control lines are so provided that byte control is possible.
Features
•
•
•
•
JEDEC standard pinout
High Density : 4Mbyte
Fast Access Time of 60/70/80ns (max.)
Low Power :
Active : (60/70/80ns)
2.2/2.0/1.8W (max.) - 1K Refresh
Standby
33mW (max.) - TTL
17mW(max.) - CMOS
TTL-compatible inputs and outputs
Separate power and ground planes to improve
noise immunity
Single power supply of 5V±10%
Height: 0.850"
•
•
•
•
Functional Diagram
CAS3#
CAS2#
RAS2#
CAS1#
CAS0#
RAS0#
1Mx16
DRAM
1Mx4
QCAS
DRAM
DQ8, DQ17
DQ26, DQ35
1Mx16
DRAM
DQ0~DQ7
DQ9~DQ16
DQ18~DQ25
DQ27~DQ34
DQ0~DQ35
Notes: 1. A0~A9 : To all devices.
2. WE# : To all devices.
3. OEs# of all devices are grounded.
V
CC
V
SS
Decoupling capacitors
to all devices.
(All specifications of this device are subject to change without notice.)
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
2
Modular Technologies
SMART
SM536013001Q4UU
May 21, 1999
Rev 1
Pin Name
A0~A9
DQ0~DQ35
CAS0#~CAS3#
RAS0#, RAS2#
WE#
PD1~PD4
V
CC
V
SS
NC
Addresses
Data Inputs/Outputs
Column Address Strobes
Row Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
NC
RAS2#
DQ26
DQ8
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
DQ17
DQ35
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
NC
NC
WE#
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
60ns
70ns
GND GND
GND GND
NC
GND
NC
NC
Pin
PD1
PD2
PD3
PD4
80ns
GND
GND
NC
GND
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
3
Modular Technologies
SMART
SM536013001Q4UU
May 21, 1999
Rev 1
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 1 to +7.0
3
0 to +70
- 55 to +125
50
Uni t
V
W
°C
°C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1
0.8
Unit
V
V
V
V
DC Characteristics
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Max.
70ns
365
6
Parameter
Operating Current
Symbol
I
CC1
Standby Current
I
CC2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
Test Conditions
RAS#, CAS# cycling; t
RC
= min.
TTL Interface
RAS#, CAS# = V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
60ns
395
6
80ns
335
6
Unit
mA
mA
Note
1, 2
3
395
395
275
3
365
365
245
3
335
335
215
mA
mA
mA
mA
1, 3
2
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
4
Modular Technologies
SMART
SM536013001Q4UU
May 21, 1999
Rev 1
DC Characteristics (contd.)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Notes:
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5
0V
≤V
out
≤
V
CC
D
out
= Disable
I
OH
= -5mA
I
OL
= 4.2mA
60ns
Min
Max
-30
30
-10
10
2.4
-
-
0.4
70ns
Min
Max
-30
30
-10
10
2.4
-
-
0.4
80ns
Min
Max
-30
30
-10
10
2.4
-
-
0.4
Unit
µA
µA
V
V
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open
condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
Capacitance
(T
A
=+25°C, V
CC
= 5.0V±10%)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS0#)
Input Capacitance (RAS2#)
Input Capacitance (CAS0#~CAS3#)
Input Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ31)
Notes:
Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I4
C
I5
C
I/O
Max
20
20
10
20
26
10
Unit
pF
pF
pF
pF
pF
pF
AC Characteristics
(T
A
= 0 to +70
°C,
V
CC
= 5.0V±10%, V
SS
= 0V)
Parameter
Access time from column address
Access time from CAS# precharge
Column address set-up time
Row address set-up time
Access time from CAS#
Column address hold time
CAS# pulse width
CAS# hold time (CBR refresh)
Symbol
t
AA
t
ACP
t
ASC
t
ASR
t
CAC
t
CAH
t
CAS
t
CHR
60ns
Min
Max
-
30
-
35
0
-
0
-
-
15
15
-
15
10000
10
-
70ns
Min
Max
-
35
-
40
0
-
0
-
-
18
15
-
18
10000
10
-
80ns
Min
Max
-
40
-
45
0
-
0
-
-
20
15
-
20
10000
10
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3, 10
3, 11
3, 4, 5
1
Corporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
5
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