Cree
®
TR2436™ LEDs
Data Sheet
CxxxTR2436-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting
in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is
optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top
contacts, consistent with industry standard packaging.
FEATURES
•
Rectangular LED Rf Performance
− 450 & 460 nm – 30+ mW
− 470 nm – 27+ mW
− 527 nm nm – 10+ mW
•
•
•
•
Epoxy Die Attach
Low Forward Voltage - 3.1 V Typical at 20 mA
1000-V ESD Threshold Rating
InGaN Junction on Thermally Conductive SiC
Substrate
APPLICATIONS
•
Small LCD Backlighting – 0.8 mm, 0.6 mm &
0.4 mm sideview packages
− Mobile Appliances
− Digital Cameras
− Car Navigation Systems
•
Medium LCD Backlighting – 0.8 mm, 0.6 mm &
0.4 mm sideview packages
− Portable PCs
− Monitors
•
•
LED Video Displays
Entertainment Systems
CxxxTR2436-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
B
CPR3DR Rev
Data Sheet:
Gold Bond Pad
Anode (+)
90 μm Diameter
TR2436 LED
240 x 360 μm
Gold Bond Pad
Cathode (-)
98 x 98 μm
Backside
Bottom Surface
140 x 260 μm
t = 115 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
LED Chip Storage Temperature
Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR2436-Sxx00
C460TR2436-Sxx00
C470TR2436-Sxx00
C527TR2436-Sxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
2.7
2.7
2.7
2.9
Typ.
3.1
3.1
3.1
3.2
Max.
3.4
3.4
3.4
3.6
Note 3
CxxxTR2436-Sxx00
30 mA
100 mA
125°C
5 V
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
21
35
CxxxTR2436-Sxx00
Dimension
200 x 320
240 x 360
115
90
1.0
98 x 98
140 x 260
Tolerance
±35
±35
±15
-5, +15
±0.5
-5, +15
±35
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy
encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC
and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature
limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine
limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DR Rev B
Standard Bins for CxxxTR2436-Sxx00
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR2436-Sxxxx) orders may be filled with any or all bins (CxxxTR2436-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
TR 450 nm Kits
C450TR2436-S3000
Radiant Flux (mW)
C450TR2436-0317
C450TR2436-0318
C450TR2436-0314
C450TR2436-0310
C450TR2436-0306
C450TR2436-0319
C450TR2436-0315
C450TR2436-0311
C450TR2436-0307
C450TR2436-0320
C450TR2436-0316
C450TR2436-0312
C450TR2436-0308
37
C450TR2436-0313
35
C450TR2436-0309
33
C450TR2436-0305
30
445
447.5
450
452.5
455
Dominant Wavelength (nm)
TR 460 nm Kits
Radiant Flux (mW)
C460TR2436-0317
C460TR2436-S3000
C460TR2436-0318
C460TR2436-0314
C460TR2436-0310
C460TR2436-0306
C460TR2436-0319
C460TR2436-0315
C460TR2436-0311
C460TR2436-0307
C460TR2436-0320
C460TR2436-0316
C460TR2436-0312
C460TR2436-0308
37
C460TR2436-0313
35
C460TR2436-0309
33
C460TR2436-0305
30
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DR Rev B
Standard Bins for CxxxTR2436-Sxx00 (continued)
TR 470 nm Kits
C470TR2436-S2700
Radiant Flux (mW)
C470TR2436-0313
C470TR2436-0314
C470TR2436-0310
C470TR2436-0306
C470TR2436-0302
C470TR2436-0315
C470TR2436-0311
C470TR2436-0307
C470TR2436-0303
C470TR2436-0316
C470TR2436-0312
C470TR2436-0308
C470TR2436-0304
35
C470TR2436-0309
33
C470TR2436-0305
30
C470TR2436-0301
27
465
467.5
470
Dominant Wavelength
472.5
475
TR 527 nm Kits
Radiant Flux (mW)
C527TR2436-S1000
C527TR2436-0307
C527TR2436-0308
C527TR2436-0305
C527TR2436-0302
C527TR2436-0309
C527TR2436-0306
C527TR2436-0303
14
C527TR2436-0304
12
C527TR2436-0301
10
520
525
530
535
Dominant Wavelength
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DR Rev B
Characteristic Curves
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Forward Current vs. Forward Voltage
100
100
Wavelength Shift vs. Forward Current
10
80
80
5
If (mA)
60
If (mA)
DW Shift (nm)
60
0
40
40
-5
20
20
-10
0
0
-15
1
2
3
4
5
0
0
1
2
3
4
5
0
20
40
Vf (V)
60
80
100
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
400%
120
Relative Intensity vs Peak Wavelength
120
100
80
60
40
20
0
320
420
520
620
Relative Intensity vs Peak Wavelength
Relative Intensity (%)
20
320
420
40
60
80
620
100
Relative Intensity (%)
Relative Intensity (%)
300%
100
200%
80
60
100%
40
20
0
0%
0
If (mA)
520
Wavelength (nm)
Wavelength (nm)
Wavelength Shift vs. Forward Current
10
5
DW Shift (nm)
0
-5
-10
-15
0
20
40
60
80
100
If (mA)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.
5
CPR3DR Rev B
嵌入式系统
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