Cree
®
TR2227™ LEDs
Data Sheet
CxxxTR2227-Sxx00
Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview
market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting
in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is
optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top
contacts, consistent with industry standard packaging.
FEATURES
•
Rectangular LED Rf Performance
− 450 & 460 nm
½
–
•
•
•
½
TR-21™ – 21 mW min.
TR-06™ - 6 mW min.
527 nm
APPLICATIONS
•
Mobile Backlighting – 0.8 mm, 0.6 mm & 0.4 mm
sideview packages
− Mobile Appliances
− Digital Cameras
− Car Navigation Systems
•
LCD Backlighting – 0.8 mm, 0.6 mm & 0.4 mm
sideview packages
− Portable PCs
− Monitors
•
LED Video Displays
Epoxy Die Attach
Low Forward Voltage - 3.3 V Typical at 20 mA
1000-V ESD Threshold Rating
• InGaN Junction on Thermally Conductive SiC
Substrate
CxxxTR2227-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
220 x 270 μm
A
CPR3EF Rev
Data Sheet:
Backside
Anode (+)
80 μm
Bottom Surface
190 x 240 μm
Junction
230 x 190 μm
Cathode (-)
80 x 80 μm
t = 50 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR2227-Sxx00
C460TR2227-Sxx00
C527TR2227-Sxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Area Cathode (μm)
Bottom Area (μm)
2.7
2.7
2.9
Typ.
3.3
3.3
3.4
Max.
3.7
3.7
3.9
Note 3
CxxxTR2227-Sxx00
30 mA
70 mA
125°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
34
CxxxTR2227-Sxx00
Dimension
190 x 230
220 x 270
50
80
1.0
80 x 80
190 x 240
Tolerance
±35
±35
±15
-5, +15
±0.5
-5, +15
±35
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
4. Specifications are subject to change without notice.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EF Rev A
Standard Bins for CxxxTR2227-Sxx00
LED chips are sorted to the Radiant Flux and Dominant Wavelength bins shown. A sorted die sheet contains die from only
one bin. Sorted die kit (CxxxTR2227-Sxx00) orders may be filled with any or all bins (CxxxTR2227-xxxx) contained in
the kit. All Radiant Flux (RF) values and all dominant wavelength values shown are specified at If = 20 mA.
TR 450 nm Kits
TR-21
Radiant Flux
C450TR2227-0213
C450TR2227-S2100
C450TR2227-0214
C450TR2227-0210
C450TR2227-0206
C450TR2227-0215
C450TR2227-0211
C450TR2227-0207
C450TR2227-0216
C450TR2227-0212
C450TR2227-0208
27.0 mW
C450TR2227-0209
24.0 mW
C450TR2227-0205
21.0 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
452.5 nm
455 nm
TR 460 nm Kits
TR-21
Radiant Flux
C460TR2227-0213
C460TR2227-S2100
C460TR2227-0214
C460TR2227-0210
C460TR2227-0206
C460TR2227-0215
C460TR2227-0211
C460TR2227-0207
C460TR2227-0216
C460TR2227-0212
C460TR2227-0208
27.0 mW
C460TR2227-0209
24.0 mW
C460TR2227-0205
21.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
TR 527 nm Kits
TR-06
C527TR2227-0213
C527TR2227-S0600
C527TR2227-0214
C527TR2227-0211
C527TR2227-0208
C527TR2227-0205
C527TR2227-0202
C527TR2227-0215
C527TR2227-0212
C527TR2227-0209
C527TR2227-0206
C527TR2227-0203
10.0 mW
Radiant Flux
C527TR2227-0210
9.0 mW
C527TR2227-0207
8.0 mW
C527TR2227-0204
7.0 mW
C527TR2227-0201
6.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EF Rev A
Relative Light Inte
100%
75%
50%
25%
Characteristic Curves
0%
0
5
10
15
20
25
30
These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant
If (mA)
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
30
25
20
30
14
12
25
10
20
8
6
15
4
10
2
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
15
10
If (mA)
Dominant Wavelength Shift (nm)
If (mA)
5
0
0
1
2
3
4
5
0
5
-2
0
-4
0
0
1
2
3
4
5
30
5
10
15
20
25
Vf (V)
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
Relative Intensity vs. Wavelength
150%
100%
125%
80%
100%
60%
75%
Relative Intensity vs. Wavelength
100%
Relative Light Intensity
Relative Light Intensity
Relative Light Intensity
0
300
5
10
15
500
20
25
30
700
80%
60%
40%
50%
40%
20%
25%
20%
0%
0%
0%
350
400
450
550
600
650
300
350
400
450
500
550
600
650
700
If (mA)
Wavelength
Wavelength
Wavelength Shift vs. Forward Current
14
12
10
8
6
4
2
0
-2
-4
0
5
10
15
20
25
30
Dominant Wavelength Shift (nm)
If (mA)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
4
CPR3EF Rev A
Radiation Pattern
This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3EF Rev A
微控制器 MCU
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