Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, HERMETIC PACKAGE-3
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | POWEREX |
包装说明 | DISK BUTTON, O-CXDB-X3 |
针数 | 3 |
Reach Compliance Code | unknown |
标称电路换相断开时间 | 150 µs |
配置 | SINGLE |
关态电压最小值的临界上升速率 | 300 V/us |
最大直流栅极触发电流 | 150 mA |
最大直流栅极触发电压 | 3 V |
JESD-30 代码 | O-CXDB-X3 |
最大漏电流 | 30 mA |
通态非重复峰值电流 | 9000 A |
元件数量 | 1 |
端子数量 | 3 |
最大通态电流 | 650000 A |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND |
封装形式 | DISK BUTTON |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
最大均方根通态电流 | 1125 A |
断态重复峰值电压 | 800 V |
重复峰值反向电压 | 800 V |
表面贴装 | YES |
端子形式 | UNSPECIFIED |
端子位置 | UNSPECIFIED |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
触发设备类型 | SCR |
T7S0086504DN | T7S0126504DN | T7S0106504DN | T7S0046504DN | T7S0026504DN | T7S0146504DN | |
---|---|---|---|---|---|---|
描述 | Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, HERMETIC PACKAGE-3 | Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, HERMETIC PACKAGE-3 | Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, HERMETIC PACKAGE-3 | Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, HERMETIC PACKAGE-3 | Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, HERMETIC PACKAGE-3 | Silicon Controlled Rectifier, 1125A I(T)RMS, 650000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, HERMETIC PACKAGE-3 |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | DISK BUTTON, O-CXDB-X3 | DISK BUTTON, O-CXDB-X3 | DISK BUTTON, O-CXDB-X3 | DISK BUTTON, O-CXDB-X3 | DISK BUTTON, O-CXDB-X3 | DISK BUTTON, O-CXDB-X3 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknow |
标称电路换相断开时间 | 150 µs | 150 µs | 150 µs | 150 µs | 150 µs | 150 µs |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
关态电压最小值的临界上升速率 | 300 V/us | 300 V/us | 300 V/us | 300 V/us | 300 V/us | 300 V/us |
最大直流栅极触发电流 | 150 mA | 150 mA | 150 mA | 150 mA | 150 mA | 150 mA |
最大直流栅极触发电压 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
JESD-30 代码 | O-CXDB-X3 | O-CXDB-X3 | O-CXDB-X3 | O-CXDB-X3 | O-CXDB-X3 | O-CXDB-X3 |
最大漏电流 | 30 mA | 30 mA | 30 mA | 30 mA | 30 mA | 30 mA |
通态非重复峰值电流 | 9000 A | 9000 A | 9000 A | 9000 A | 9000 A | 9000 A |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最大通态电流 | 650000 A | 650000 A | 650000 A | 650000 A | 650000 A | 650000 A |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大均方根通态电流 | 1125 A | 1125 A | 1125 A | 1125 A | 1125 A | 1125 A |
断态重复峰值电压 | 800 V | 1200 V | 1000 V | 400 V | 200 V | 1400 V |
重复峰值反向电压 | 800 V | 1200 V | 1000 V | 400 V | 200 V | 1400 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
端子位置 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
触发设备类型 | SCR | SCR | SCR | SCR | SCR | SCR |
厂商名称 | POWEREX | - | POWEREX | POWEREX | POWEREX | POWEREX |
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