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this document by MRFIC0930/D
DEVICE ON LIFETIME BUY
Designed primarily for use in 900 MHz wireless communication systems
such as GSM, AMPS, and Industrial, Scientific, and Medical (ISM) band
applications. The MRFIC0930 is a two–stage low noise amplifier with an
integrated step attenuator and is packaged in a low–cost SO–8 package.
The MRFIC0930DM is packaged in the smaller Micro–8 package. The
attenuator is controlled by a Vgain Pin. The LNA can be turned off during
transmit mode to save current by using the Rx Enable Pin. The amplifier can
be matched to optimize gain or noise figure with simple off–chip input
matching.
900 MHz GaAs
LOW NOISE AMPLIFIER
WITH GAIN CONTROL
SEMICONDUCTOR
TECHNICAL DATA
Freescale Semiconductor, Inc...
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Usable Frequency Range = 800 to 1000 MHz
19 dB Typ Gain
Gain Attenuation = 18 dB (Typ)
1.7 dB Typ Noise Figure
Simple Off–chip Matching for Maximum Gain/Noise Figure Flexibility
High Reverse Isolation = 41 dB (Typ)
Low Power Consumption = 24 mW (Typ)
Single Bias Supply = 2.7 to 4.5 V
Low Standby Current = 20
µA
(Typ)
Low Cost Surface Mount Plastic Package
8
1
(Scale 2:1)
PLASTIC PACKAGE
CASE 751
(SO–8, Tape & Reel Only)
8
1
(Scale 2:1)
DM SUFFIX
PLASTIC PACKAGE
CASE 846A
(Micro–8, Tape & Reel Only)
PIN CONNECTIONS
Simplified Block Diagram
RF In
Gnd
VD1
Rx Enable
1
2
3
4
8
7
6
5
Vgain
Gnd
Vgain
Gnd
RF Out/VD2
(Top View)
RF In
RF Out/VD2
ORDERING INFORMATION
Device
MRFIC0930R2
TA = –30 to 70°C
This device contains 12 active transistors.
MRFIC0930DMR2
Operating
Temp Range
Package
SO–8*
Tape & Reel
Micro–8**
Tape & Reel
*2,500 Units per 16 mm, 13 inch reel.
**2,500 Units per 12 mm, 13 inch reel.
©
Motorola, Inc. 1999
Rev 2
MOTOROLA RF/IF DEVICE DATA
For More Information On This Product,
1
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900 MHz GaAs
Low Noise Amplifier
with Gain Control
MRFIC0930
Freescale Semiconductor, Inc.
MRFIC0930
MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted)
Rating
Supply Voltage
RF Input Power
Gain Control Voltage
Enable Voltage
Storage Temperature Range
Operating Ambient Temperature
Symbol
VD1, VD2
PRF
Vgain
RX Enable
Tstg
TA
Value
5.5
3
5.5
5.5
–65 to 150
–30 to 70
Unit
Vdc
dBm
Vdc
Vdc
°C
°C
NOTES:
1. Meets Human Body Model (HBM)
≤750
V and Machine Model (MM)
≤100
V.
2. ESD data available upon request.
DEVICE ON LIFETIME BUY
RECOMMENDED OPERATING RANGES
Parameter
RF Frequency
Supply Voltage
Vgain, High Gain
Vgain, Low Gain
Rx Enable Voltage, On
Rx Enable Voltage, Off
To bias, apply VD1 and VD2 before Rx Enable.
Symbol
fRF
VD1, VD2
Vgain
Vgain
Rx Enable
Rx Enable
Min
800
2.7
–
–
2.7
0
Typ
–
–
3.0
0
–
–
Max
1000
4.5
–
–
VD1, VD2
0.2
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
NOTE:
ELECTRICAL CHARACTERISTICS
(VD1, VD2 = 2.8 V, TA = 25°C, RF = 940 MHz, Rx Enable = 2.8 V, V Gain = 2.8 V, RF In = –30 dBm,
Characteristic
RF Gain
MRFIC0930
MRFIC0930DM
RF Gain (Vgain = 0 V)
SSB Noise Figure [Note]
SSB Noise Figure (Vgain = 0 V) [Note]
RF Input 3rd Order Intercept Point [Note]
RF Input 3rd Order Intercept Point (Vgain = 0 V) [Note]
Input 1.0 dB Gain Compression [Note]
Input 1.0 dB Gain Compression (Vgain = 0 V) [Note]
Reverse Isolation (S12)
Input Return Loss
Input Return Loss (Vgain = 0 V)
Output Return Loss
Output Return Loss (Vgain = 0 V)
Supply Current Rx Mode
Supply Current Standby Mode (Rx Enable = 0 V)
NOTE:
Guaranteed by design.
unless otherwise noted. Tested in Circuit Shown in Figure 1.)
Symbol
S21
17
17.5
S21
NF
NF
IIP3
IIP3
P1dB
P1dB
S12
S11
S11
S22
S22
ID
ID
–
–
–
–12
–7.0
–21.5
–16
–
–
–
–
–
–
–
19
19
0.8
1.7
10.4
–9.0
–5.7
–20.8
–11
41
15
15
15
12
8.5
20
21
21.5
4.0
3.0
–
–
–
–
–
–
–
–
–
–
12
200
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
mA
Min
Typ
Max
Unit
dB
m
A
2
For More Information On This Product,
MOTOROLA RF/IF DEVICE DATA
Go to: www.freescale.com
LAST ORDER 28SEP01 LAST SHIP 28SEP02
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
MRFIC0930
Figure 1. 900 MHz Test Circuit
C3
RF In
C1
L1
1
8
2
7
C7
V Gain
VD1
C5
3
6
Freescale Semiconductor, Inc...
C2
Rx Enable
C6
R1
L2
4
5
RF Out
C4
For MRFIC0930:
C1 = 2.2 pF
C2 = 2.1 pF
C3, C4, C5, C6, C7 = 1,000 pF
L1 = 18 nH
L2 = 10 nH
R1 = 220
Ω
For MRFIC0930DM:
C1 = 1.3 pF
C2 = 2.1 pF
C3, C4, C5, C6, C7 = 1000 pF
L1 = 22 nH
L2 = 8.2 nH
R1 = 180
Ω
VD2
MOTOROLA RF/IF DEVICE DATA
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DEVICE ON LIFETIME BUY
Freescale Semiconductor, Inc.
MRFIC0930
TYPICAL CHARACTERISTICS
(For SO–8 Packaged MRFIC0930)
Figure 2. Reverse Isolation versus Frequency
–40
–41
–42
70°C
–43
25°C
–44
–45
–46
800 820
VD = 2.8 V
Vgain = 0 V
840
860
880
900
920
940
960
980
1000
TA = –25°C
ISOLATION (dB)
–39
–40
–41
–42
–43
–44
–45
–46
800 820
840
860
880
900
920
940
VD = 2.8 V
Vgain = 2.8 V
960
980
70°C
25°C
TA = –25°C
Figure 3. Reverse Isolation versus Frequency
1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 4. Gain versus Frequency
22
18.8
18.6
20
GAIN (dB)
TA = –25°C
18
70°C
GAIN ATTENUATION (dB)
Figure 5. Gain Attenuation versus Frequency
TA = –25°C
18.4
18.2
18
17.8
17.6
800
VD = 2.8 V
Vgain = 0 V
Pin = –30 dBm
820
840
860
880
900
920
940
960
25°C
70°C
16
25°C
VD = 2.8 V
Vgain = 2.8 V
Pin = –30 dBm
940
960
980 1000
14
800
820
840
860
880
900
920
980 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Gain versus Frequency
24
22
GAIN ATTENUATION (dB)
20
GAIN (dB)
18
16
14
12
10
800
820
840
860
880
900
920
Vgain = VD
TA = 25°C
Pin = –30 dBm
940
960
980 1000
VD = 4.5 V
3.0 V
2.8 V
19.4
19.2
19
18.8
18.6
18.4
18.2
18
17.8
17.6
800
Figure 7. Gain Attenuation versus Frequency
VD = 4.5 V
3.0 V
Vgain = VD
TA = 25°C
Pin = –30 dBm
900
920
940
960
2.8 V
820
840
860
880
980 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
4
For More Information On This Product,
MOTOROLA RF/IF DEVICE DATA
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DEVICE ON LIFETIME BUY
Freescale Semiconductor, Inc...
REVERSE ISOLATION (dB)
Freescale Semiconductor, Inc.
MRFIC0930
TYPICAL CHARACTERISTICS
(For SO–8 Packaged MRFIC0930)
Figure 8. Input Power versus Output Power
4.0
Pout , OUTPUT POWER (dBm)
VD = 4.5 V
0
3.0 V
2.8 V
–4.0
Pout , OUTPUT POWER (dBm)
–4.0
–8.0
–12
3.0 V
–16
–20
–24
–28
–32
–30
–28
–26
–24
–22
–20
–18
–16
2.8 V
f = 940 MHz
TA = 25°C
Vgain = 0 V
–14
–12
VD = 4.5 V
Figure 9. Input Power versus Output Power
–8.0
DEVICE ON LIFETIME BUY
f = 940 MHz
TA = 25°C
Vgain = VD
–28
–26
–24
–22
–20
–18
–16
–14
–12
–10
–12
–30
–10
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 10. Input Power versus Output Power
4.0
2.0
Pout , OUTPUT POWER (dBm)
0
–2.0
–4.0
–6.0
–8.0
–10
–12
–14
–30
–28
–26
–24
–22
–20
–18
–16
f = 940 MHz
VD = 2.8 V
Vgain = 2.8 V
–14
–12
–10
25°C
70°C
TA = –25°C
Pout , OUTPUT POWER (dBm)
–15
–10
Figure 11. Input Power versus Output Power
TA = –25°C
70°C
–20
–25
–30
–35
–30 –28
25°C
f = 940 MHz
VD = 2.8 V
Vgain = 0 V
–26
–24
–22
–20
–18
–16
–14
–12
–10
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
3.0
2.5
2.0
25°C
1.5
1.0
0.5
800
TA = –25°C
VD = 2.8 V
Vgain = 2.8 V
820
840
860
880
900
920
940
960
980 1000
16
15
NF, NOISE FIGURE (dBm)
70°C
NF, NOISE FIGURE (dBm)
14
13
12
Figure 13. Noise Figure versus Frequency
VD = 2.8 V
Vgain = 0 V
70°C
11
25°C
10
9.0
8.0
800
820
840
860
880
900
920
940
TA = –25°C
960
980 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
MOTOROLA RF/IF DEVICE DATA
For More Information On This Product,
5
Go to: www.freescale.com
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Freescale Semiconductor, Inc...
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