SN
NN01Z Q
Z60Q
Logic Le
evel N-Ch Po
ower MOSFE
ET
Logic Le
L
evel Ga Drive App
ate
plicatio
on
Fe
eatures
•
Logic level gate drive
l
e
•
Max. R
DS(ON
= 135m
Ω
a V
GS
= 10V I
D
= 0.5A
at
V,
N)
•
Low R
DS(on)
provides hi
igher efficie
ency
•
ESD protec
cted: 1000V (HBM
±500
V
0V)
•
Halogen fr and RoH complian device
ree
HS
nt
D
G
Package
SOT-223
Or
rdering In
nformatio
on
Part Num
mber
SNN01Z
Z60Q
Marking
g
SNN01Z6
60
D
S
SOT-223
arking Inf
formation
n
Ma
Column 1 Device Cod
1:
de
Column 2 Production Information
2:
n
e.g.) YW
WW
-. Y: Y
Year Code
-. WW Week Code
W:
e
SNN0
01Z60
YWW
bsolute m
maximum ratings
(T
C
=25°C unles otherwise noted)
T
ss
n
Ab
Characteristic
Drain-source v
voltage
Gate-source v
G
voltage
Drain current (DC)
*
Symb
bol
V
DS
SS
V
GS
SS
I
D
T
c
=25°C
T
c
=100°C
I
DM
M
(Note 2)
Rati
ing
60
0
±2
20
1
0.6
63
4
35
5
1
0.1
18
1.8
15
50
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
°C
°C
Drain current (Pulsed)
*
Si
ingle pulsed avalanche e
energy
Re
epetitive ava
alanche curr
rent
E
AS
S
I
AR
R
E
AR
R
P
D
T
J
T
st
tg
(Note 1)
Re
epetitive ava
alanche energy
(Note 1)
Po
ower dissipa
ation
Ju
unction temp
perature
St
torage temp
perature rang
ge
*L
Limited only m
maximum junc
ction tempera
ature
v.
SEP-12
Rev date: 24-S
KS
SD-T5A014-0
000
www.auk.co
o.kr
1o 8
of
SNN01Z60Q
Thermal Characteristics
Characteristic
Thermal resistance, junction to ambient
* When mounted on the minimum pad size recommended (PCB).
Symbol
R
th(j-a)
Rating
Max. 69
Unit
°C/W
Electrical Characteristics
(T
j
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
(Note 3,4)
(Note 3,4)
(Note 3,4)
(Note 3)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Test Condition
I
D
=250uA, V
GS
=0V
I
D
=250uA, V
DS
=V
GS
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
GS
=10V, I
D
=0.5A
V
GS
=4.5V, I
D
=0.5A
V
DS
=10V, I
D
=0.5A
V
DS
=25V, V
GS
=0V,
f=1MHz
Min.
60
1
-
-
-
Typ.
-
-
-
-
90
109
Max.
-
2.5
1
±10
135
165
-
-
-
-
-
-
-
-
10
-
-
Unit
V
V
uA
uA
mΩ
mΩ
S
-
-
-
-
-
3
314
28
21
4.7
6.9
22.1
6.1
8
1.1
1.7
pF
Turn-off delay time
Fall time
(Note 3,4)
V
DS
=30V, I
D
=1A,
R
G
=25Ω
-
-
-
-
ns
Total gate charge
(Note 3,4)
(Note 3,4)
Q
g
Q
gs
Q
gd
V
DS
=48V, V
GS
=10V,
I
D
=1A
Gate-source charge
Gate-drain charge
-
-
nC
(Note 3,4)
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=1A
I
S
=1A, V
GS
=0V
dI
S
/dt=-100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
25
18.8
Max.
1
4
1.2
-
-
Unit
A
A
V
ns
uC
Reverse recovery charge
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=35mH, I
AS
=1A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 24-SEP-12
KSD-T5A014-000
www.auk.co.kr
2 of 8
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