电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

W10M

产品描述BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-1W
产品类别半导体    分立半导体   
文件大小354KB,共2页
制造商YEA SHIN TECHNOLOGY CO.,LTD
官网地址http://www.yeashin.com/
下载文档 详细参数 选型对比 全文预览

W10M在线购买

供应商 器件名称 价格 最低购买 库存  
W10M - - 点击查看 点击购买

W10M概述

BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-1W

桥 RECTIFIER,1-相 FULL-WAVE,1KV V(RRM),BR-1W

W10M规格参数

参数名称属性值
状态CONSULT MFR
二极管类型桥式整流二极管

文档预览

下载PDF文档
DATA SHEET
SEMICONDUCTOR
W005M THRU W10M
SINGLE-PHAS
E SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.5 Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded epoxy
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
A
D
WOM
B
C
DIM.
A
B
C
D
E
F
WOG
MIN.
8.90
25.4
27.9
5.10
0.70
4.60
MAX.
9.30
5.60
0.80
5.60
MECHANICAL DATA
Case : Molded plastic
Polarity: As marked on Body
Weight : 0.05 ounces, 1.42grams
Mounting position : Any
E
All Dimensions in millimeter
+
F
F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=25 C
SYMBOL
W005M
V
RRM
V
RMS
V
DC
I
(AV)
W01M
100
70
100
W02M
200
140
200
W04M
400
280
400
1.5
W06M
600
420
600
W08M
800
560
800
W10M
UNIT
1000
700
1000
V
V
V
A
50
35
50
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
@T
J
=125 C
I
FSM
V
F
I
R
I
2
t
C
J
R
θ
JA
T
J
T
STG
50
1.0
5.0
500
10.4
A
V
uA
A
2
S
pF
C/W
I
2
t Rating for fusing (t < 8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
20
36
-55 to +150
-55 to +150
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient
http://www.yeashin.com
1
REV.02 20130305

W10M相似产品对比

W10M W005M W01M W02M W04M W06M W08M
描述 BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),BR-1W 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB GENESIC SEMICONDUCTOR - W04M - BRIDGE RECTIFIER; 1PH; 1.5A; 400V; DOB 1.5 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 451  1616  1708  1270  1657  11  49  7  58  20 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved