DATA SHEET
SEMICONDUCTOR
W005M THRU W10M
SINGLE-PHAS
E SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.5 Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded epoxy
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
A
D
WOM
B
C
DIM.
A
B
C
D
E
F
WOG
MIN.
8.90
25.4
27.9
5.10
0.70
4.60
MAX.
9.30
5.60
0.80
5.60
MECHANICAL DATA
Case : Molded plastic
Polarity: As marked on Body
Weight : 0.05 ounces, 1.42grams
Mounting position : Any
E
All Dimensions in millimeter
+
F
F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=25 C
SYMBOL
W005M
V
RRM
V
RMS
V
DC
I
(AV)
W01M
100
70
100
W02M
200
140
200
W04M
400
280
400
1.5
W06M
600
420
600
W08M
800
560
800
W10M
UNIT
1000
700
1000
V
V
V
A
50
35
50
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
@T
J
=125 C
I
FSM
V
F
I
R
I
2
t
C
J
R
θ
JA
T
J
T
STG
50
1.0
5.0
500
10.4
A
V
uA
A
2
S
pF
C/W
I
2
t Rating for fusing (t < 8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
20
36
-55 to +150
-55 to +150
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient
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REV.02 20130305
DEVICE CHARACTERISTICS
W005M THRU W10M
AVERAGE FORWARD CURRENT
AMPERES
1.5
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
50
40
1.0
30
20
0.5
SINGLE PHASE HALF
WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
10
Single Half-Sine-Wave
(JEDEC METHOD)
0
20
40
60
100
120
140
160
0
1
2
5
10
20
50
100
AMBIENT TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL JUNCTION CAPACITANCE
100
10
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
CAPACITANCE , (pF)
1.0
10
0.1
T
J
= 25 C
T
J
= 25 C, f= 1MHz
PULSE WIDTH 300us
2% DUTY CYCLE
1.0
1
4
10
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT ,(uA)
T
J
= 125 C
10
1.0
0.1
T
J
= 25 C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
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REV.02 20130305
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