Preliminary
Datasheet
RJP60V0DPM-80
600V - 22A - IGBT
Application: Inverter
Features
High breakdown-voltage
Low collector to emitter saturation voltage
V
CE(sat)
= 1.5 V typ. (at I
C
= 22 A, V
GE
= 15 V, Ta = 25°C)
Short circuit withstand time (6
s
typ.)
Trench gate and thin wafer technology (G6H series)
R07DS1036EJ0100
Rev.1.00
Mar 01, 2013
Outline
RENESAS Package code: PRSS0003ZD-A
(Package name: TO-3PF)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
I
C(peak) Note1
P
C Note2
Note2
j-c
Tj
Tstg
Ratings
600
±30
45
22
90
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Page 1 of 7
RJP60V0DPM-80
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
Min
—
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.5
1.9
1080
58
42
75
10
45
45
40
100
70
6
Max
1
±1
7.5
2.1
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 22 A, V
GE
= 15 V
Note3
I
C
= 45 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 22 A
V
CE
= 300 V, V
GE
= 15 V
I
C
= 22 A
Rg = 5
Inductive load
V
CC
360 V , V
GE
= 15 V
Tc = 100
C
Short circuit withstand time
Notes: 3. Pulse test.
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Page 2 of 7
RJP60V0DPM-80
Preliminary
Main Characteristics
Maximum
Safe Operation Area
1000
50
Turn-off
Safe Operation Area
Collector Current
I
C
(A)
100
10
Collector Current
I
C
(A)
P
W
0
μ
s
40
=
1
0
μ
10
s
30
1
20
0.1
Tc =
25°C
Single
pulse
0.01
1
10
100
1000
10
Tc =
25°C
Single
pulse
0
1
10
100
1000
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
Typical
Output Characteristics
100
100
Ta =
25
°
C
Pulse
Test
80
15
V
14
V
13
V
Typical
Output Characteristics
Ta =
150
°
C
Pulse
Test
80
15
V
14
V
13
V
60
12
V
11
V
10
V
20
9V
V
GE
= 8 V
0
1
2
3
4
5
Collector Current
I
C
(A)
60
12
V
40
11
V
10
V
9V
V
GE
= 8 V
0
1
2
3
4
5
Collector Current
I
C
(A)
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
40
20
0
0
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter
Saturation
Voltage
vs.
Gate to
Emitter Voltage
(Typical)
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
6
Ta =
25
°
C
Pulse
Test
5
Collector to
Emitter
Saturation
Voltage
vs.
Gate to
Emitter Voltage
(Typical)
6
Ta =
150
°
C
Pulse
Test
5
4
4
3
I
C
= 45
A
22 A
1
8
10
12
14
16
18
20
3
I
C
= 45
A
2
22 A
1
8
10
12
14
16
18
20
2
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter Voltage V
GE
(V)
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Page 3 of 7
RJP60V0DPM-80
Preliminary
Collector to
Emitter
Saturation
Voltage
vs. Junction Temparature
(Typical)
Typical Transfer
Characteristics
100
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
4
V
GE
=
15
V
Pulse
Test
3
I
C
= 45
A
2
22 A
3A
Collector Current
I
C
(A)
80
Tc = –25°C
25°C
75°C
125°C
60
40
1
20
0
4
6
8
10
V
CE
=
10
V
Pulse
Test
12
14
16
0
−25
0
25
50
75
100 125 150
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter
Cutoff
Voltage
vs. Junction Temparature
(Typical)
10
V
CE
=
10
V
Pulse
Test
I
C
=
10 mA
10000
Junction Temparature Tj
(
°
C)
Gate to
Emitter
Cutoff
Voltage V
GE(off)
(V)
Typical
Capacitance
vs.
Collector to
Emitter Voltage
Capacitance C (pF)
8
1000
Cies
6
1 mA
100
Coes
10
V
GE
=
0
V
f =
1
MHz
Ta =
25
°
C
0
50
100
150
200
Cres
4
2
0
−25
1
0
25
50
75
100 125 150
250
300
Junction Temparature Tj
(
°
C)
Collector to
Emitter Voltage V
CE
(V)
Dynamic
Input
Characteristics (Typical)
Collector to
Emitter Voltage V
CE
(V)
600
V
CC
= 400 V
300
V
12
400
V
CC
= 400 V
300
V
200
V
CE
0
I
C
=
22 A
Ta =
25
°
C
40
60
80
8
4
0
20
0
100
Gate Charge
Qg
(nc)
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Gate to
Emitter Voltage V
GE
(V)
800
V
GE
16
Page 4 of 7
RJP60V0DPM-80
Switching Characteristics (Typical) (1)
1000
V
CC
=
300
V, V
GE
=
15
V
Rg
= 5
Ω,
Ta =
25
°
C
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing
Energy Losses E
(μJ)
Switching
Time
t (ns)
V
CC
=
300
V, V
GE
=
15
V
Rg
= 5
Ω,
Ta =
25
°
C
1000
Eon
Eoff
100
100
t
f
td(off)
td(on)
10
tr
1
1
10
100
10
1
10
100
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (3)
1000
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (4)
10000
Swithing
Energy Losses E
(μJ)
Switching
Time
t (ns)
V
CC
=
300
V, V
GE
=
15
V
I
C
=
22 A,
Ta =
25
°
C
V
CC
=
300
V, V
GE
=
15
V
I
C
=
22 A,
Ta =
25
°
C
t
f
100
td(off)
td(on)
tr
10
1
10
100
1000
Eon
Eoff
100
1
10
100
Gate Resistance Rg (Ω)
(Inductive
load)
Switching Characteristics (Typical) (5)
1000
10000
V
CC
=
300
V, V
GE
=
15
V
I
C
=
22 A, Rg
= 5
Ω
Gate Registance Rg (Ω)
(Inductive
load)
Switching Characteristics (Typical) (6)
Swithing
Energy Losses E
(μJ)
V
CC
=
300
V, V
GE
=
15
V
I
C
=
22 A, Rg
= 5
Ω
Switching
Time
t (ns)
t
f
100
td(off)
td(on)
tr
10
25
1000
Eon
Eoff
50
75
100
125
150
100
25
50
75
100
125
150
Case
Temperature Tc
(°C)
(Inductive
load)
Case
Temperature Tc
(°C)
(Inductive
load)
R07DS1036EJ0100 Rev.1.00
Mar 01, 2013
Page 5 of 7
PCB设计
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