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OD-110LISOLHT

产品描述HIGH TEMPERATURE GaAlAs IR EMITTERS
文件大小236KB,共2页
制造商Micropac
官网地址http://www.micropac.com
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OD-110LISOLHT概述

HIGH TEMPERATURE GaAlAs IR EMITTERS

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HIGH TEMPERATURE GaAlAs IR EMITTERS
FEATURES
OD-110LISOLHT
• Wide temperature rating
• 2 lead TO-39 package
• Narrow angle of emission
• Isolated case
• RoHS and REACH compliant
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
Δλ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
TEST CONDITIONS
I
F
= 500mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 500mA
I
R
= 10μA
V
R
= 0V
MIN
50
TYP
100
850
40
7
1.7
MAX
UNITS
mW
nm
nm
Deg
2
Volts
Volts
pF
nsec
nsec
5
30
20
20
Rise Time
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
1
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1
Derate
2
Derate
1000mW
500mA
1.5A
5V
260°C
per Thermal Derating Curve above 25°C
linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
Thermal Resistance, R
THJC
-65°C to 150°C
150°C
150°C/W Typical
60°C/W Typical
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision July 1, 2013

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