Preliminary
Datasheet
RJK03F8DNS
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 7 m
typ. (at V
GS
= 8 V)
Pb-free
Halogen-free
R07DS0662EJ0200
(Previous: REJ03G1918-0100)
Rev.2.00
Feb 01, 2012
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±12
16
64
16
10
10
12.5
10.0
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0662EJ0200 Rev.2.00
Feb 01, 2012
Page 1 of 6
RJK03F8DNS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
7
8.3
40
1500
162
104
0.7
11.3
3.5
4.6
12.8
8.0
38.1
6.8
0.85
21
Max
—
±0.1
1
2.5
8.4
10.4
—
2100
—
—
1.9
—
—
—
—
—
—
—
1.11
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 8 A, V
GS
= 8 V
Note4
I
D
= 8 A, V
GS
= 4.5 V
Note4
I
D
= 8 A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 16 A
V
GS
= 8 V, I
D
= 8 A
V
DD
10 V
R
L
= 1.25
Rg = 4.7
I
F
= 16 A, V
GS
= 0
Note4
I
F
=16 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0662EJ0200 Rev.2.00
Feb 01, 2012
Page 2 of 6
RJK03F8DNS
Preliminary
Main Characteristics
Power vs. Temperature Derating
20
100
1m
Maximum Safe Operation Area
10
0
μ
s
μ
s
Channel Dissipation Pch (W)
10
s
15
Drain Current I
D
(A)
10
PW = 10 ms
DC
10
1
O
pe
5
Operation in
this area is
0.1
limited by R
DS(on)
Tc = 25 °C
0.01
1 shot Pulse
0.1
1
ra
n
tio
0
50
100
150
200
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
4.5 V
8V
2.9 V
20
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
Pulse Test
Drain Current I
D
(A)
12
Drain Current I
D
(A)
16
2.8 V
16
2.7 V
12
8
8
4
4
Tc = 75°C
25°C
–25°C
V
GS
= 2.5 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Registance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage
V
DS(on)
(mV)
320
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Pulse Test
30
240
160
10
V
GS
= 4.5 V
8V
80
I
D
= 10 A
5A
2A
3
0
3
6
9
12
1
1
3
10
30
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0662EJ0200 Rev.2.00
Feb 01, 2012
Page 3 of 6
RJK03F8DNS
Static Drain to Source on State Resistance
vs. Temperature
Drain to Source On State Registance
R
DS(on)
(m)
40
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
32
Ciss
1000
300
Coss
100
Crss
30
V
GS
= 0
f = 1 MHz
24
I
D
= 2 A, 5 A, 10 A
V
GS
= 4.5 V
8
8V
0
–25
0
25
50
2 A, 5 A, 10 A
16
10
75
100 125 150
0
10
20
30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
Reverse Drain Current vs.
Source to Drain Voltage
20
20
Reverse Drain Current I
DR
(A)
I
D
= 16 A
10 V
16
5V
Pulse Test
40
V
GS
30
V
DS
V
DD
= 25 V
10 V
16
12
12
20
8
8
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
5
10
15
20
4
4
0
0
25
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
20
I
AP
= 10 A
V
DD
= 15 V
duty < 0.1%
Rg
50
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0662EJ0200 Rev.2.00
Feb 01, 2012
Page 4 of 6
RJK03F8DNS
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
θch −
c(t) =
γs
(t)
• θch −
c
θch −
c = 10.0°C/W, Tc = 25°C
P
DM
PW
T
0.05
0.03
2
0.0
1
e
0
uls
0.
p
t
ho
1s
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
15 V
50
Ω
V
DD
0
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0662EJ0200 Rev.2.00
Feb 01, 2012
Page 5 of 6
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