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5962D0151101QXX: 产品描述SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68; 产品类别存储存储; 文件大小125KB，共14页; 制造商Cobham Semiconductor Solutions

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5962D0151101QXX概述

SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68

5962D0151101QXX规格参数

参数名称	属性值
厂商名称	Cobham Semiconductor Solutions
零件包装代码	QMA
包装说明	,
针数	68
Reach Compliance Code	unknown
ECCN代码	3A001.A.2.C
最长访问时间	25 ns
其他特性	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION
备用内存宽度	16
JESD-30 代码	S-XQMA-G68
内存密度	16777216 bit
内存集成电路类型	SRAM MODULE
内存宽度	32
功能数量	1
端子数量	68
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-40 °C
组织	512KX32
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	MICROELECTRONIC ASSEMBLY
并行/串行	PARALLEL
认证状态	Not Qualified
筛选级别	MIL-PRF-38535 Class Q
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	AUTOMOTIVE
端子形式	GULL WING
端子位置	QUAD
总剂量	10k Rad(Si) V

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Standard Products

QCOTS

UT9Q512K32 16Megabit SRAM MCM

Advanced Data Sheet

August 31, 2001

FEATURES

25ns maximum (5 volt supply) address access time

Asynchronous operation for compatible with industry

standard 512K x 8 SRAMs

TTL compatible inputs and output levels , three-state

bidirectional data bus

Typical radiation performance

- Total dose: 50krads

- SEL Immune >100 MeV-cm

/mg

- LET

(0.25) = 40 MeV-cm

/mg

- Saturated Cross Section (cm

) per bit, 1.0E -9

- <1E-10 errors/bit-day, Adams 90% geosynchronous

heavy ion

- Inherent Neutron Hardness: 1.0E14n/cm

- Dose Rate (estimated)

- Upset 1.0E8 rad(Si)/sec

- Latchup >1.0E11 rad(Si)/sec

Packaging options:

- 68-lead dual cavity ceramic quad flatpack (CQFP)

Standard Microcircuit Drawing 5962-01511

- QML T and Q compliant part

INTRODUCTION

The QCOTS

UT9Q512K32 Quantified Commercial

Off-the-Shelf product is a high-performance 2M byte

(16Mbit) CMOS static RAM multi-chip module (MCM),

organized as four individual 524,288 x 8 bit SRAMs with a

common output enable. Memory expansion is provided by

an active LOW chip enable (En), an active LOW output

enable (G), and three-state drivers. This device has a power-

down feature that reduces power consumption by more than

90% when deselected.

Writing to each memory is accomplished by taking chip

enable (En) input LOW and write enable ( Wn) inputs LOW.

Data on the eight I/O pins (DQ

through DQ

) is then written

into the location specified on the address pins (A

through

). Reading from the device is accomplished by taking

chip enable (En) and output enable ( G) LOW while forcing

write enable (Wn) HIGH. Under these conditions, the

contents of the memory location specified by the address

pins will appear on the I/O pins.

The eight input/output pins (DQ

through DQ

) are placed

in a high impedance state when the device is deselected (En

HIGH), the outputs are disabled (G HIGH), or during a write

operation (En LOW and Wn LOW). Perform 8, 16, 24 or

32 bit accesses by making Wn along with En a common

A(18:0)

512K x 8

DQ(31:24)

DQ3(7:0)

DQ(23:16)

DQ2(7:0)

DQ(15:8)

DQ1(7:0)

DQ(7:0)

DQ0(7:0)

Figure 1. UT9Q512K32 SRAM Block Diagram

5962D0151101QXX相似产品对比

	5962D0151101QXX	5962L0151101QXA	5962D0151101TXA	5962P0151101TXA	UT9Q512K32-SPX	UT9Q512K32-SWX	5962L0151101TXA	5962P0151101QXA	5962D0151101QXA
描述	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68	SRAM Module, 512KX32, 25ns, CMOS, DUAL CAVITY, CERAMIC, QFP-68
零件包装代码	QMA	QMA	QMA	QMA	QMA	QMA	QMA	QMA	QMA
针数	68	68	68	68	68	68	68	68	68
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A991.B.2.A	3A991.B.2.A	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns
其他特性	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION	ALSO ALLOWS 8 BIT AND 24 BIT OPERATION
备用内存宽度	16	16	16	16	16	16	16	16	16
JESD-30 代码	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68	S-XQMA-G68
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
内存宽度	32	32	32	32	32	32	32	32	32
功能数量	1	1	1	1	1	1	1	1	1
端子数量	68	68	68	68	68	68	68	68	68
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
厂商名称	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	-	-	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions
筛选级别	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class T	MIL-PRF-38535 Class T	-	-	MIL-PRF-38535 Class T	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q
总剂量	10k Rad(Si) V	50k Rad(Si) V	10k Rad(Si) V	30k Rad(Si) V	-	-	50k Rad(Si) V	30k Rad(Si) V	10k Rad(Si) V
JESD-609代码	-	e0	e0	e0	-	-	e0	e0	e0
端子面层	-	TIN LEAD	TIN LEAD	TIN LEAD	-	-	TIN LEAD	TIN LEAD	TIN LEAD
Base Number Matches	-	1	1	1	1	1	-	-	-

5962D0151101QXX

5962D0151101QXX概述

5962D0151101QXX规格参数

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