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H5TC8G43AMR-H9A: 产品描述512M X 16 DDR DRAM, PBGA96; 产品类别存储; 文件大小436KB，共35页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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H5TC8G43AMR-H9A概述

512M X 16 DDR DRAM, PBGA96

512M × 16 双倍速率同步动态随机存储器动态随机存取存储器, PBGA96

H5TC8G43AMR-H9A规格参数

参数名称	属性值
功能数量	1
端子数量	96
最大工作温度	85 Cel
最小工作温度	0.0 Cel
最大供电/工作电压	1.45 V
最小供电/工作电压	1.28 V
额定供电电压	1.35 V
加工封装描述	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
状态	ACTIVE
工艺	CMOS
包装形状	RECTANGULAR
包装尺寸	GRID ARRAY, THIN PROFILE, FINE PITCH
表面贴装	Yes
端子形式	BALL
端子间距	0.8000 mm
端子位置	BOTTOM
包装材料	PLASTIC/EPOXY
温度等级	OTHER
内存宽度	16
组织	512M X 16
存储密度	8.59E9 deg
操作模式	SYNCHRONOUS
位数	5.37E8 words
位数	512M
存取方式	MULTI BANK PAGE BURST
内存IC类型	DDR DRAM
端口数	1

H5TC8G43AMR-H9A相似产品对比

	H5TC8G43AMR-H9A	H5TC8G43AMR	H5TC8G43AMR-G7A	H5TC8G43AMR-PBA	H5TC8G63AMR-G7A	H5TC8G63AMR-H9A	H5TC8G63AMR-PBA	H5TC8G83AMR-G7A	H5TC8G83AMR-H9A	H5TC8G83AMR-PBA
描述	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	512M X 16 DDR DRAM, PBGA96	1G X 8 DDR DRAM, PBGA78
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	96	96	96	96	96	96	96	96	96	78
表面贴装	Yes	Yes	Yes	Yes	Yes	Yes	YES	Yes	Yes	YES
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
内存宽度	16	16	16	16	16	16	16	16	16	8
组织	512M X 16	512M X 16	512M X 16	512M X 16	512M X 16	512M X 16	512MX16	512M X 16	512M X 16	1GX8
最大工作温度	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	-	85 Cel	85 Cel	-
最小工作温度	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	0.0 Cel	-	0.0 Cel	0.0 Cel	-
最大供电/工作电压	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	-	1.45 V	1.45 V	-
最小供电/工作电压	1.28 V	1.28 V	1.28 V	1.28 V	1.28 V	1.28 V	-	1.28 V	1.28 V	-
额定供电电压	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	-	1.35 V	1.35 V	-
加工封装描述	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	-	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	HALOGEN FREE AND ROHS COMPLIANT, FBGA-96	-
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-	ACTIVE	ACTIVE	-
工艺	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS	-
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-
包装尺寸	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-
端子间距	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	-	0.8000 mm	0.8000 mm	-
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-
存储密度	8.59E9 deg	8.59E9 deg	8.59E9 deg	8.59E9 deg	8.59E9 deg	8.59E9 deg	-	8.59E9 deg	8.59E9 deg	-
操作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-
位数	512M	512M	512M	512M	512M	512M	-	512M	512M	-
存取方式	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-
内存IC类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM	-
端口数	1	1	1	1	1	1	-	1	1	-

H5TC8G43AMR-H9A

H5TC8G43AMR-H9A概述

H5TC8G43AMR-H9A规格参数

H5TC8G43AMR-H9A相似产品对比

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