512M X 16 DDR DRAM, PBGA96
512M × 16 双倍速率同步动态随机存储器 动态随机存取存储器, PBGA96
参数名称 | 属性值 |
功能数量 | 1 |
端子数量 | 96 |
最大工作温度 | 85 Cel |
最小工作温度 | 0.0 Cel |
最大供电/工作电压 | 1.45 V |
最小供电/工作电压 | 1.28 V |
额定供电电压 | 1.35 V |
加工封装描述 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 |
状态 | ACTIVE |
工艺 | CMOS |
包装形状 | RECTANGULAR |
包装尺寸 | GRID ARRAY, THIN PROFILE, FINE PITCH |
表面贴装 | Yes |
端子形式 | BALL |
端子间距 | 0.8000 mm |
端子位置 | BOTTOM |
包装材料 | PLASTIC/EPOXY |
温度等级 | OTHER |
内存宽度 | 16 |
组织 | 512M X 16 |
存储密度 | 8.59E9 deg |
操作模式 | SYNCHRONOUS |
位数 | 5.37E8 words |
位数 | 512M |
存取方式 | MULTI BANK PAGE BURST |
内存IC类型 | DDR DRAM |
端口数 | 1 |
H5TC8G43AMR | H5TC8G43AMR-G7A | H5TC8G43AMR-H9A | H5TC8G43AMR-PBA | H5TC8G63AMR-G7A | H5TC8G63AMR-H9A | H5TC8G63AMR-PBA | H5TC8G83AMR-G7A | H5TC8G83AMR-H9A | H5TC8G83AMR-PBA | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 512M X 16 DDR DRAM, PBGA96 | 1G X 8 DDR DRAM, PBGA78 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 96 | 78 |
表面贴装 | Yes | Yes | Yes | Yes | Yes | Yes | YES | Yes | Yes | YES |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 8 |
组织 | 512M X 16 | 512M X 16 | 512M X 16 | 512M X 16 | 512M X 16 | 512M X 16 | 512MX16 | 512M X 16 | 512M X 16 | 1GX8 |
最大工作温度 | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | 85 Cel | - | 85 Cel | 85 Cel | - |
最小工作温度 | 0.0 Cel | 0.0 Cel | 0.0 Cel | 0.0 Cel | 0.0 Cel | 0.0 Cel | - | 0.0 Cel | 0.0 Cel | - |
最大供电/工作电压 | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V | - | 1.45 V | 1.45 V | - |
最小供电/工作电压 | 1.28 V | 1.28 V | 1.28 V | 1.28 V | 1.28 V | 1.28 V | - | 1.28 V | 1.28 V | - |
额定供电电压 | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | - | 1.35 V | 1.35 V | - |
加工封装描述 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | - | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | - |
状态 | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | - | ACTIVE | ACTIVE | - |
工艺 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS | - |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - |
包装尺寸 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | - | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | - |
端子间距 | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | 0.8000 mm | - | 0.8000 mm | 0.8000 mm | - |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
存储密度 | 8.59E9 deg | 8.59E9 deg | 8.59E9 deg | 8.59E9 deg | 8.59E9 deg | 8.59E9 deg | - | 8.59E9 deg | 8.59E9 deg | - |
操作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | - |
位数 | 512M | 512M | 512M | 512M | 512M | 512M | - | 512M | 512M | - |
存取方式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | - | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | - |
内存IC类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | - | DDR DRAM | DDR DRAM | - |
端口数 | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 | - |
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