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RJP1CS04DWT: 产品描述1250V - 50A - IGBT Application: Inverter; 文件大小69KB，共4页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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RJP1CS04DWT概述

1250V - 50A - IGBT Application: Inverter

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Preliminary

Datasheet

RJP1CS04DWT/RJP1CS04DWA

1250V - 50A - IGBT

Application: Inverter

Features



Low collector to emitter saturation voltage

CE(sat)

= 1.8 V typ. (at I

= 50 A, V

= 15 V, Ta = 25C)



High speed switching



Short circuit withstands time (10

s

min.)

R07DS0827EJ0100

Rev.1.00

Jan 23, 2013

Outline

Die: RJP1CS04DWT-80

Wafer: RJP1CS04DWA-80

1. Gate

2. Collector (The back)

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Junction temperature

Symbol

CES

GES

Ratings

1250

±30

100

150

Unit

C

R07DS0827EJ0100 Rev.1.00

Jan 23, 2013

Page 1 of 3

Notice

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(Note 1)

(Note 2)

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Colophon 2.2

RJP1CS04DWT相似产品对比

	RJP1CS04DWT	RJP1CS04DWA	RJP1CS04DWA-80W0	RJP1CS04DWT-80X0
描述	1250V - 50A - IGBT Application: Inverter	1250V - 50A - IGBT Application: Inverter	1250V - 50A - IGBT Application: Inverter	1250V - 50A - IGBT Application: Inverter

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