an
AMP
company
RF MOSFET Power
100 - 500 MHz
Features
l
l
l
l
l
l
Transistor,
IOW, 28V
UF281 OP
N-Channel Enhancement
DMOS Structure
Lower Capacitances
Lower Noise Floor
Mode Device
Operation
for Broadband
Common Source Configuration
100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
L
N
1
1
1%
3.61
1 246
1
4.37
1
077
J42
1
.097
.I72
Electrical Characteristics
at 25°C
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
* Per Side
C oss
0,
GP
-
10
5
2.4
-
-
203
PF
pF
dB
%
-
V,,=28.0
V, I==1 .O MHz’
VDs=28.0 V, F=l .O MHz’
V,,=28.0
V,,=28.0
V,,=28.0
V, I,,,=1 00.0 mA, PO,,,=1 0.0 W, F=500 MHz
V, I,,=1 00.0 mA, P,&
V, IDo= 00.0 mA, Poe1
0.0 W, F=500 MHz
0.0 W, F=500 MHz
9D
VSWR-T
50
-
pecifications Subject to Change Without Notice.
M/A-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Inc.
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor,
iOW, 28V
UF281 O
v2
Typical Device impedance
Frequency (MHz)
100
&., (OHMS)
30.0 - i 150.0
15.0 - j 90.0
4.2 - j 46.0
V,,=28 V, l,=jOO mA, P,,?lO.O
Watts
z LOAD
(OHMS)
70.0 + i 110.0
55.0 + j 80.0
48.0 + j 50.0
300
500
Z,, is the series equwalent input impedance of the device from gate to gate.
Z LOAD tbe optimum series equivalent load impedance as measured from drain to drain.
is
RF Test Fixture
P
Cl0
c5
cl
ii36
7, a 9
cu. 12 13,
1% 17
us
Cl6
zL3
Tt 2
A
R
T
S
L
I
ST
27 PC
30 PF
6.8 pr
15 PC
SQo PC
.OfS uf
.louf
SOUfSOV.
loo mr4 P5 v.
UK Mw 25 V.
250 5 SO Du SwdIGID
COAX
7 TURNS 5 NO. 22 AVG VIRE
1s TURNS 5 NJ. 22 AVG vm
35’ OF SO OHN TRANSNISSIDN IDE
.7v 5 50 pE( T-W
LINE
1~OFSOOHNlRANSNISSIONLIM
lF281OP
L4
lo
3
L7, 9
ue
l-3, 4
LS,6
01
Specifications Subject to Change Without Notice.
MIA-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
Tel. +44 (1344) 869 59
Fax +44 (1344) 300 02
stm32/stm8
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