HSMP-386x
Surface Mount PIN Diodes
Data Sheet
Description/Applications
The HSMP-386x series of general purpose PIN diodes are
designed for two classes of applications. The first is attenu-
ators where current consumption is the most important
design consideration. The second application for this
series of diodes is in switches where low capacitance is the
driving issue for the designer.
The HSMP-386x series Total Capacitance (C
T
) and Total Re-
sistance (R
T
) are typical specifications. For applications that
require guaranteed performance, the general purpose HSMP-
383x series is recommended.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic, carrier
lifetime.
Features
•
Unique Configurations in Surface Mount Packages
– Add Flexibility
– Save Board Space
– Reduce Cost
•
Switching
– Low Distortion Switching
– Low Capacitance
•
Attenuating
– Low Current Attenuating for Less Power
Consumption
•
Matched Diodes for Consistent Performance
•
Better Thermal Conductivity for Higher Power
Dissipation
•
Low Failure in Time (FIT) Rate
[1]
•
Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
Pin Connections and Package Marking, SOT-363
1
2
3
6
5
4
LUx
Notes:
1. Package marking provides orientation, identification, and date code.
2. See “Electrical Specifications” for appropriate package marking.
Package Lead Code Identification,
SOT-23, SOT-143
(Top View)
SINGLE
SERIES
Package Lead Code Identification,
SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code Identification,
SOT-363
(Top View)
UNCONNECTED
TRIO
6
5
4
#0
COMMON
ANODE
#2
COMMON
CATHODE
B
COMMON
ANODE
C
COMMON
CATHODE
1
2
L
3
#3
RING
QUAD
3
4
#4
E
F
1
#7
2
UNDER DEVELOPMENT
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol
I
f
P
IV
T
j
T
stg
q
jc
Parameter
Forward Current (1 µs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23
1
50
150
-65 to 150
500
SOT-323
1
50
150
-65 to 150
150
ESD WARNING:
Handling Precautions Should Be Taken To Avoid
Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to
the circuit board.
Electrical Specifications T
C
= 25°C, each diode
PIN General Purpose Diodes, Typical Specifications T
A
= 25°C
Part Number
HSMP-
3860
3862
3863
3864
386B
386C
386E
386F
386L
Package
Marking
Code
L0
L2
L3
L4
L0
L2
L3
L4
LL
Lead
Code
0
2
3
4
B
C
E
F
L
Configuration
Single
Series
Common Anode
Common Cathode
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Minimum
Breakdown
Voltage V
BR
(V)
50
Typical
Series Resistance
R
S
(Ω)
3.0/1.5*
Typical
Total Capacitance
C
T
(pF)
0.20
est Conditions
T
V
R
= V
BR
Measure
I
R
≤ 10 µA
I
F
= 10 mA
f = 100 MHz
I
F
= 100 mA*
V
R
= 50 V
f = 1 MHz
2
HSMP-386x Typical Parameters at T
C
= 25°C
Part Number
HSMP-
386x
Total Resistance
R
T
(Ω)
22
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
t (ns)
500
I
F
= 50 mA
T
R
= 250 mA
Reverse Recovery Time
T
rr
(ns)
80
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
C
T
(pF)
0.20
V
R
= 50 V
f = 1 MHz
est Conditions
T
Typical Performance, T
C
= 25°C, each diode
0.35
1000
RESISTANCE (OHMS)
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
100
INPUT INTERCEPT POINT (dBm)
TOTAL CAPACITANCE (pF)
T
A
= +85 C
T
A
= +25 C
T
A
= –55 C
120
Diode Mounted as a
Series Switch in a
115
50 Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1
10
30
10
0.15
0
2
4
6
8
10 12 14 16 18 20
1
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse Bias.
I
F
– FORWARD BIAS CURRENT (mA)
Figure 2. Typical RF Resistance vs. Forward Bias
Current.
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
T
rr
– REVERSE RECOVERY TIME (ns)
1000
100
I
F
– FORWARD CURRENT (mA)
10
V
R
= 5 V
100
V
R
= 10 V
V
R
= 20 V
1
0.1
125 C 25 C –50 C
0
0.2
0.4
0.6
0.8
1.0
1.2
10
10
20
FORWARD CURRENT (mA)
30
0.01
V
F
– FORWARD VOLTAGE (mA)
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
Figure 5. Forward Current vs. Forward
Voltage.
Equivalent Circuit Model
HSMP-386x Chip*
R
s
R
j
1.5
Ω
C
j
0.12 pF
R
T
= 1.5 + R
j
C
T
= C
P
+ C
j
12
R
j
=
0.9
Ω
I
I = Forward Bias Current in mA
* See AN1124 for package models
3
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1
BIAS 1
RF 2
BIAS 2
RF 1
RF 2
BIAS
BIAS
Figure 6. Simple SPDT Switch, Using Only Positive Current.
Figure 7. High Isolation SPDT Switch, Dual Bias.
RF COMMON
BIAS
RF COMMON
RF 1
RF 2
RF 1
BIAS
RF 2
Figure 8. Switch Using Both Positive and Negative Current.
VARIABLE BIAS
Figure 9. Very High Isolation SPDT Switch, Dual Bias.
INPUT
RF IN/OUT
FIXED
BIAS
VOLTAGE
Figure 10. Four Diode p Attenuator. See AN1048 for details.
Figure 10. Four Diode π Attenuator. See AN1048 for details.
4
Typical Applications for Multiple Diode Products
(continued)
BIAS
“ON”
“OFF”
1
6
5
4
1
1
+V
0
2
0
+V
1
RF in
2
3
RF out
2
Figure 11. High Isolation SPST Switch
Figure 11. High Isolation SPST Switch
(Repeat Cells as Required).
(Repeat Cells as Required).
1
2
3
2
1
3
Figure 12. HSMP-386L Unconnected Trio used in a Positive Voltage,
High Isolation Switch.
2
“ON”
“OFF”
1
0
0
2
+V
–V
0
4
5
6
1
b1
b2
b3
3
2
1
1
4
RF in
5
6
RF out
Figure 13. HSMP-386L used in a SP3T Switch.
Figure 14. HSMP-386L Unconnected Trio used in a Dual Voltage,
High Isolation Switch.
5
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