BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
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•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847
BC848
Collector-Base Voltage
BC846
BC847
BC848
Emitter-Base Voltage
BC846
BC847
BC848
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
V
CBO
80
50
30
V
Symbol
V
CEO
65
45
30
V
Value
Unit
V
3
COLLECTOR
3
1
BASE
2
EMITTER
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
T
J
, T
stg
Max
200
620
−55 to
+150
Unit
mW
°C/W
°C
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 12
Publication Order Number:
BC846AWT1/D
BC846, BC847, BC848
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15
5.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CBO
nA
mA
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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2
BC846, BC847, BC848
BC846A, BC847A, BC848A
300
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
300
150°C
V
CE
= 5 V
200
25°C
200
25°C
100
−55°C
100 −55°C
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
0.18
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.0001
0.001
0.01
I
C
/I
B
= 20
Figure 2. DC Current Gain vs. Collector
Current
150°C
25°C
−55°C
0.1
I
C
, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
I
C
/I
B
= 20
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
V
CE
= 5 V
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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3
BC846, BC847, BC848
BC846A, BC847A, BC848A
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 6. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 7. Base−Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 8. Capacitances
Figure 9. Current−Gain − Bandwidth Product
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4
BC846, BC847, BC848
BC846B
600
500
400
300
200
100
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
−55°C
150°C
V
CE
= 1 V
h
FE
, DC CURRENT GAIN
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
600
150°C
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
25°C
Figure 10. DC Current Gain vs. Collector
Current
0.30
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 20
0.25
0.20
Figure 11. DC Current Gain vs. Collector
Current
150°C
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
25°C
I
C
/I
B
= 20
−55°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
V
CE
= 5 V
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
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