MGA-43628
High Linearity (2.0 – 2.2) GHz Power Amplifier Module
Data Sheet
Description
Avago Technologies’ MGA-43628 is a fully matched power
amplifier for use in the (2.0-2.2) GHz band. High linear
output power at 5 V is achieved through the use of Avago
Technologies’ proprietary 0.25
m
GaAs Enhancement-
mode pHEMT process. MGA-43628 is housed in a miniature
5.0 mm x 5.0 mm molded-chip-on-board (MCOB) module
package. A detector is also included on-chip. The compact
footprint coupled with high gain, high linearity and good
efficiency makes the MGA-43628 an ideal choice as a
power amplifier for small cell BTS PA applications.
Features
High linearity performance: Typ -50 dBc ACLR1
[1]
at
27.2 dBm linear output power (biased with 5.0 V ope-
rating voltage)
High Gain: 41.5 dB
Good efficiency
Fully matched
Built-in detector
GaAs E-pHEMT Technology
[2]
Low cost small package size: 5.0 x 5.0 x 0.9 mm
MSL3
Lead free/Halogen free RoHS compliance
Applications
Final stage high linearity amplifier for Picocell and
Enterprise Femtocell PA targeted for small cell BTS
downlink applications.
Specifications
2.14 GHz; 5.0 V, Idqtotal = 440 mA (typ), W-CDMA Test model #1,
64 DPCH downlink signal
Component Image
5.0 x 5.0 x 0.9 mm Package Outline
A
VAGO
43628
YYWW
XXXX
TOP VIEW
Note:
Package marking provides orientation
and identification
“43628 “ = Device part number
“YYWW” = year and work week
“XXXX” = assembly lot number
PAE: 14%
27.2 dBm linear Pout @ ACLR1 = -50 dBc
[1]
41.5 dB Gain
Detector range: 20 dB
Note:
1. W-CDMA Test model #1, 64DPCH downlink signal.
2. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Pin Configuration
Functional Block Diagram
28 Vdd1
26 Vdd2
24 Vdd3
23 Vdd3
22 Vdd3
27 Gnd
25 Gnd
Vdd1
Vdd2
Vdd3
Gnd 1
Gnd 2
NC 3
RFin 4
NC 5
Gnd 6
NC 7
21 Gnd
20 Gnd
19 RFout
18 RFout
17 RFout
16 Gnd
RFin
1
st
Stage
2
nd
Stage
3
rd
Stage
RFout
Biasing Circuit
Vc1 Vc2 Vc3
VddBias
Vdet
(5.0 x 5.0 x 0.9) mm
15 Gnd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 450 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Vc1 8
Vc2 9
Gnd 11
Gnd 13
VddBias 12
Vdet 14
Vc3 10
Absolute Maximum Rating
[1]
T
A
= 25° C
Symbol
Vdd,
VddBias
Vc
P
in,max
P
diss
T
j
T
STG
Thermal Resistance
[2,3]
Units
V
V
dBm
W
C
C
Parameter
Supply voltages, bias supply voltage
Control Voltage
CW RF Input Power
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Absolute Max.
6
(Vdd)
20
7.2
150
-65 to 150
jc
= 13°C/W
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique at Vdd =
5.5 V operating voltage.
3. Board temperature (TB) is 25° C, for TB
> 56.4° C derate the device power at 77 mW
per °C rise in Board (package belly) tem-
perature.
Electrical Specifications
T
A
= 25° C, Vdd = VddBias = 5.0 V , Vc1=2.4V, Vc2=1.6V, Vc3=2.2V, Idqtotal = 440 mA, RF performance at 2.14 GHz, W-CDMA
Test model #1, 64DPCH downlink signal operation unless otherwise stated.
Symbol
Vdd
Idqtotal
Gain
OP1dB
ACLR1 @ Pout = 27.2 dBm
PAE @
Pout = 27.2 dBm
|S11|
DetR
Parameter and Test Condition
Supply Voltage
Quiescent Supply Current
Gain
Output Power at 1dB Gain Compression
W-CDMA Test model #1, 64DPCH downlink signal
Power Added Efficiency
Input Return Loss, 50
source
Detector RF dynamic range
Units
V
mA
dB
dBm
dBc
%
dB
dB
Min.
Typ.
5.0
440
Max.
600
38
41.5
36.8
-50
11.5
14
15.8
20
T
A
= 25° C, Vdd = VddBias = 5.5 V , Vc1=2.4V, Vc2=1.6V, Vc3=2.2V, Idqtotal = 490 mA, RF performance at 2.14 GHz,
W-CDMA Test model #1, 64DPCH downlink signal operation unless otherwise stated.
Symbol
Vdd
Idqtotal
Gain
OP1dB
ACLR1 @ Pout = 27.9 dBm
PAE @ Pout = 27.9 dBm
|S11|
DetR
Parameter and Test Condition
Supply Voltage
Quiescent Supply Current
Gain
Output Power at 1dB Gain Compression
W-CDMA Test model #1, 64DPCH downlink signal
Power Added Efficiency
Input Return Loss, 50
source
Detector RF dynamic range
Units
V
mA
dB
dBm
dBc
%
dB
dB
Typ.
5.5
490
41.5
37.6
-50
13.2
16.1
20
2
Product Consistency Distribution Charts
[4]
LSL
LSL
38
39
40
41
42
43
44
11
12
13
14
15
16
Figure 1. Gain at Pout=27.2dBm; LSL=38dB, Nominal = 41.5dB
Figure 2. PAE at Pout=27.2dBm; LSL=11.5%, Nominal = 14%
700
750
800
850
900
-60
-58
-56
-54
-52
-50
Figure 3. Idd_Total at Pout = 27.2 dBm, Nominal = 750 mA
Figure 4. ACLR1 at Pout = 27.2 dBm, Nominal = -50.8 dBc
Note:
4. Distribution data sample size is 1500 samples taken from 3 different wafer lots. T
A
= 25° C, Vdd = VddBias = 5.0 V, Vc1 = 2.4 V, Vc2 = 1.6 V, Vc3 = 2.2 V,
RF performance at 2.14 GHz unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the
upper and lower limits.
3
MGA-43628 typical over-temperature performance at Vc1 = 2.4 V, Vc2 = 1.6 V, Vc3 = 2.2 V as shown in Figure 30 unless
otherwise stated
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
1.2
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
1.2
S21
85° C
25° C
-40° C
S21
85° C
25° C
-40° C
S21,S11,S22/dB
S21,S11,S22/dB
S22
S11 S11
S22
S11
1.4
1.6
1.8
2.0 2.2 2.4
Frequency/GHz
2.6
2.8
3.0
1.4
1.6
1.8
2.0 2.2 2.4
Frequency/GHz
2.6
2.8
3.0
Figure 5. Small-signal performance Over-temperature
Vdd = VddBias = 5.0 V operating voltage
Figure 6. Small-signal performance Over-temperature
Vdd = VddBias = 5.5 V operating voltage
-35
-40
-45
ACLR1/dBc
-50
-55
-60
-65
19
20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
ACLR1_85° C
PAE_85° C
ACLR1_25° C
PAE_25° C
ACLR1_-40° C
PAE_-40° C
24
20
16
ACLR1/dBc
PAE/%
12
8
4
0
-35
-40
-45
-50
-55
-60
-65
ACLR1_85° C
PAE_85° C
ACLR1_25° C
PAE_25° C
ACLR1_-40° C
PAE_-40° C
24
20
16
12
8
4
0
19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
PAE/%
PAE/%
Figure 7. Over-temperature ACLR1, PAE vs Pout @ 2.11 GHz
Vdd = VddBias = 5.0 V operating voltage
Figure 8. Over-temperature ACLR1, PAE vs Pout @ 2.11 GHz
Vdd = VddBias = 5.5 V operating voltage
-35
-40
ACLR1/dBc
-45
-50
-55
-60
-65
19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
Figure 9. Over-temperature ACLR1, PAE vs Pout @ 2.14 GHz
Vdd = VddBias = 5.0 V operating voltage
ACLR1_85° C
PAE_85° C
ACLR1_25° C
PAE_25° C
ACLR1_-40° C
PAE_-40° C
24
20
16
12
8
4
0
ACLR1/dBc
PAE/%
-35
-40
-45
-50
-55
-60
-65
19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
Figure 10. Over-temperature ACLR1, PAE vs Pout @ 2.14 GHz
Vdd = VddBias = 5.5 V operating voltage
ACLR1_85° C
PAE_85° C
ACLR1_25° C
PAE_25° C
ACLR1_-40° C
PAE_-40° C
24
20
16
12
8
4
0
4
MGA-43628 typical over-temperature performance at Vc1 = 2.4 V, Vc2 = 1.6 V, Vc3 = 2.2 V unless otherwise stated
-35
-40
ACLR1/dBc
-45
-50
-55
-60
-65
19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
ACLR1_85° C
PAE_85° C
ACLR1_25° C
PAE_25° C
ACLR1_-40° C
PAE_-40° C
24
20
ACLR1/dBc
16
PAE/%
12
8
4
0
-35
-40
-45
-50
-55
-60
-65
19 20 21 22 23 24 25 26 27 28 29 30
Pout/dBm
ACLR1_85° C
PAE_85° C
ACLR1_25° C
PAE_25° C
ACLR1_-40° C
PAE_-40° C
24
20
16
12
8
4
0
PAE/%
30
Figure 11. Over-temperature ACLR1, PAE vs Pout @ 2.17 GHz
Vdd = VddBias = 5.0 V operating voltage
Figure 12. Over-temperature ACLR1, PAE vs Pout @ 2.17 GHz
Vdd = VddBias = 5.5 V operating voltage
1200
1100
1000
Idd total/mA
Idd_Total_85° C
Idd_Total_25° C
Idd_Total_-40° C
1200
1100
1000
Idd total/mA
Idd_Total_85° C
Idd_Total_25° C
Idd_Total_-40° C
900
800
700
600
500
400
300
19
20
21
22
23
24 25 26
Pout/dBm
27
28
29
30
900
800
700
600
500
400
300
19
20
21
22
23
24 25 26
Pout/dBm
27
28
29
Figure 13. Over-temperature Idd_Total vs Pout @ 2.14 GHz
Vdd = VddBias = 5.0 V operating voltage
Figure 14. Over-temperature Idd_Total vs Pout @ 2.14 GHz
Vdd = VddBias = 5.5 V operating voltage
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
12
Vdet_85° C
Vdet_25° C
Vdet_-40° C
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
12
Vdet_85° C
Vdet_25° C
Vdet_-40° C
Vdet/V
14
16
18
20
22 24 26
Pout/dBm
28
30
32
34
Vdet/V
14
16
18
20
22 24 26
Pout/dBm
28
30
32
34
Figure 15. Over-temperature Vdet vs Pout @ 2.14 GHz
Vdd = VddBias = 5.0 V operating voltage
Figure 16. Over-temperature Vdet vs Pout @ 2.14 GHz
Vdd = VddBias = 5.5 V operating voltage
5
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