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HM66WP36257BP-65

产品描述ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA119, BGA-119
产品类别存储    存储   
文件大小268KB,共31页
制造商Hitachi (Renesas )
官网地址http://www.renesas.com/eng/
下载文档 详细参数 选型对比 全文预览

HM66WP36257BP-65概述

ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA119, BGA-119

HM66WP36257BP-65规格参数

参数名称属性值
厂商名称Hitachi (Renesas )
零件包装代码BGA
包装说明BGA,
针数119
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间6.5 ns
其他特性FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码R-PBGA-B119
长度22 mm
内存密度9437184 bit
内存集成电路类型ZBT SRAM
内存宽度36
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度2.35 mm
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
宽度14 mm

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HM66WP18513/HM66WP36257
9M Flow Through Zero Bus Latency (ZBL) SRAM
(HM66WP18513) 512-Kword
×
18-bit
(HM66WP36257) 256-Kword
×
36-bit
ADE-203-1285C (Z)
Preliminary
Rev. 0.3
Mar. 29, 2002
Description
The HM66WP18513 is a synchronous fast static RAM organized as 512-Kword
×
18-bit. The
HM66WP36257 is a synchronous fast static RAM organized as 256-Kword
×
36-bit. It has realized high
speed access time by employing the most advanced CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 100-
pin LQFP and 119-pin BGA.
Note : All power supply(V
DD
,V
DDQ
) and ground(V
SS
) pins must be connected for proper operation of the
device.
TM
TM
ZBL : Zero Bus Latency and compatible ZBT SRAM. ZBT is trademark of Integrated Device
Technology, Inc.,
Features
3.3 V or 2.5V power supply, 3.3 V or 2.5 V I/O supply voltage
Clock frequency: 133/117/100 MHz
Fast clock access time: 6.5/7.5/8.5 ns (max)
Low operating current: 200/180/160 mA (max)
Address data pipeline capability
Internal input registers (Address, Data, Control)
Internal self-timed write cycle
ADV/LD burst control pins
Asynchronous output enable controlled three-state outputs
Individual byte write control
Power down state via ZZ
Common data inputs and data outputs
High board density 100-pin LQFP package and 119-pin BGA package
Burst control selected pin
LBO
(Interleave or linear burst oder)
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specifications.

HM66WP36257BP-65相似产品对比

HM66WP36257BP-65 HM66WP18513BP-65 HM66WP36257BP-75 HM66WP18513BP-75 HM66WP18513BP-85 HM66WP36257FP-75 HM66WP36257BP-85 HM66WP18513FP-75
描述 ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 6.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 8.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, LQFP-100 ZBT SRAM, 256KX36, 8.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 7.5ns, CMOS, PQFP100, LQFP-100
零件包装代码 BGA BGA BGA BGA BGA QFP BGA QFP
包装说明 BGA, BGA, BGA, BGA, BGA, LQFP, BGA, LQFP,
针数 119 119 119 119 119 100 119 100
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 6.5 ns 6.5 ns 7.5 ns 7.5 ns 8.5 ns 7.5 ns 8.5 ns 7.5 ns
其他特性 FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100
长度 22 mm 22 mm 22 mm 22 mm 22 mm 20 mm 22 mm 20 mm
内存密度 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 36 18 36 18 18 36 36 18
功能数量 1 1 1 1 1 1 1 1
端子数量 119 119 119 119 119 100 119 100
字数 262144 words 524288 words 262144 words 524288 words 524288 words 262144 words 262144 words 524288 words
字数代码 256000 512000 256000 512000 512000 256000 256000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX36 512KX18 256KX36 512KX18 512KX18 256KX36 256KX36 512KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA BGA BGA BGA BGA LQFP BGA LQFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.35 mm 2.35 mm 2.35 mm 2.35 mm 2.35 mm 1.6 mm 2.35 mm 1.6 mm
最大供电电压 (Vsup) 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V
最小供电电压 (Vsup) 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 BALL BALL BALL BALL BALL GULL WING BALL GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 0.65 mm 1.27 mm 0.65 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM QUAD BOTTOM QUAD
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 Hitachi (Renesas ) Hitachi (Renesas ) - - - Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
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