电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HM66WP36257BP-85

产品描述ZBT SRAM, 256KX36, 8.5ns, CMOS, PBGA119, BGA-119
产品类别存储    存储   
文件大小268KB,共31页
制造商Hitachi (Renesas )
官网地址http://www.renesas.com/eng/
下载文档 详细参数 选型对比 全文预览

HM66WP36257BP-85概述

ZBT SRAM, 256KX36, 8.5ns, CMOS, PBGA119, BGA-119

HM66WP36257BP-85规格参数

参数名称属性值
厂商名称Hitachi (Renesas )
零件包装代码BGA
包装说明BGA,
针数119
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间8.5 ns
其他特性FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码R-PBGA-B119
长度22 mm
内存密度9437184 bit
内存集成电路类型ZBT SRAM
内存宽度36
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度2.35 mm
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
宽度14 mm

文档预览

下载PDF文档
HM66WP18513/HM66WP36257
9M Flow Through Zero Bus Latency (ZBL) SRAM
(HM66WP18513) 512-Kword
×
18-bit
(HM66WP36257) 256-Kword
×
36-bit
ADE-203-1285C (Z)
Preliminary
Rev. 0.3
Mar. 29, 2002
Description
The HM66WP18513 is a synchronous fast static RAM organized as 512-Kword
×
18-bit. The
HM66WP36257 is a synchronous fast static RAM organized as 256-Kword
×
36-bit. It has realized high
speed access time by employing the most advanced CMOS process and high speed circuit designing
technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 100-
pin LQFP and 119-pin BGA.
Note : All power supply(V
DD
,V
DDQ
) and ground(V
SS
) pins must be connected for proper operation of the
device.
TM
TM
ZBL : Zero Bus Latency and compatible ZBT SRAM. ZBT is trademark of Integrated Device
Technology, Inc.,
Features
3.3 V or 2.5V power supply, 3.3 V or 2.5 V I/O supply voltage
Clock frequency: 133/117/100 MHz
Fast clock access time: 6.5/7.5/8.5 ns (max)
Low operating current: 200/180/160 mA (max)
Address data pipeline capability
Internal input registers (Address, Data, Control)
Internal self-timed write cycle
ADV/LD burst control pins
Asynchronous output enable controlled three-state outputs
Individual byte write control
Power down state via ZZ
Common data inputs and data outputs
High board density 100-pin LQFP package and 119-pin BGA package
Burst control selected pin
LBO
(Interleave or linear burst oder)
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specifications.

HM66WP36257BP-85相似产品对比

HM66WP36257BP-85 HM66WP18513BP-65 HM66WP36257BP-75 HM66WP18513BP-75 HM66WP18513BP-85 HM66WP36257FP-75 HM66WP36257BP-65 HM66WP18513FP-75
描述 ZBT SRAM, 256KX36, 8.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 6.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 8.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, LQFP-100 ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA119, BGA-119 ZBT SRAM, 512KX18, 7.5ns, CMOS, PQFP100, LQFP-100
零件包装代码 BGA BGA BGA BGA BGA QFP BGA QFP
包装说明 BGA, BGA, BGA, BGA, BGA, LQFP, BGA, LQFP,
针数 119 119 119 119 119 100 119 100
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 8.5 ns 6.5 ns 7.5 ns 7.5 ns 8.5 ns 7.5 ns 6.5 ns 7.5 ns
其他特性 FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100
长度 22 mm 22 mm 22 mm 22 mm 22 mm 20 mm 22 mm 20 mm
内存密度 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 36 18 36 18 18 36 36 18
功能数量 1 1 1 1 1 1 1 1
端子数量 119 119 119 119 119 100 119 100
字数 262144 words 524288 words 262144 words 524288 words 524288 words 262144 words 262144 words 524288 words
字数代码 256000 512000 256000 512000 512000 256000 256000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX36 512KX18 256KX36 512KX18 512KX18 256KX36 256KX36 512KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA BGA BGA BGA BGA LQFP BGA LQFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.35 mm 2.35 mm 2.35 mm 2.35 mm 2.35 mm 1.6 mm 2.35 mm 1.6 mm
最大供电电压 (Vsup) 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V 2.625 V
最小供电电压 (Vsup) 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V 2.375 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 BALL BALL BALL BALL BALL GULL WING BALL GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 0.65 mm 1.27 mm 0.65 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM QUAD BOTTOM QUAD
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 Hitachi (Renesas ) Hitachi (Renesas ) - - - Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
2017年3月版主芯币及实物礼品奖励公告
根据 EEWORLD版主规则及版主操作手册https://bbs.eeworld.com.cn/thread-370268-1-1.html2017年3月获得奖励版主名单如下:295084版主月度考核分数查询,请进入EEWORLD论坛进入自己负责的版块中 ......
eric_wang 为我们提建议&公告
【汇总】EEWorld邀你来玩拆解(第三期)——无线充电鼠标垫
活动详情:https://bbs.eeworld.com.cn/thread-1186893-1-1.html @北方 【雷柏V10RGB幻彩背光游戏鼠标硬垫拆解评测】先拆为敬 @cjjh2014 雷柏V10RGB幻彩背光游戏鼠标硬垫 ......
EEWORLD社区 以拆会友
看芯片规格书有个地方求指教
最近在看一个程序,程序一开始是初始化SCON_1的值为SCON_1=0xC0,也就是说SCON_1=1100 0000 在芯片规格书上的介绍是这么写的,看下图,在bit7位里面有两个定义,我应该选哪里个?bit6 ......
火火山 51单片机
在WinCE 上, 如果ARM CPU 已经内置了CPU 控制器, 在平台上实现USB 功能,需要哪些步骤?
在WinCE 上, 如果ARM CPU 已经内置了CPU 控制器, 在平台上实现USB 功能,需要哪些步骤? 如果CPU 原厂的BSP 已经支持了USB 功能, 我们还需要哪些步骤?...
max1 嵌入式系统
因人脸识别错误,他被关进了监狱!
通过人脸识别技术,低头,可以解锁手机;抬头,可以作为门禁、出入凭证等等。人工智能时代,在人脸识别带来便利的同时,潜在风险也无处不在。 533310 近日,据外媒报道,来自美国密西 ......
eric_wang 聊聊、笑笑、闹闹
wince 5.0 使用 imaging COM组件 画png图片 内存泄露
BOOL ImageFromIDResource(UINT nID, LPCTSTR sTR, IImage** pIImage) { HRSRC hRsrc = ::FindResource (hInstRes,MAKEINTRESOURCE(nID),sTR); // type if (!hRsrc) return FALSE; / ......
pianziokok 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1366  1970  2923  855  172  40  16  53  26  34 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved