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JANSF2N7261U: 产品描述Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18; 产品类别分立半导体晶体管; 文件大小282KB，共5页; 制造商Microsemi; 官网地址https://www.microsemi.com

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JANSF2N7261U概述

Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18

JANSF2N7261U规格参数

参数名称	属性值
是否Rohs认证	不符合
Objectid	1817750355
包装说明	LEADLESS PACKAGE-18
针数	18
Reach Compliance Code	compliant
ECCN代码	EAR99
Samacsys Manufacturer	Microsemi Corporation
Samacsys Modified On	2020-06-12 09:16:55
YTEOL	0
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	130 mJ
外壳连接	SOURCE
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	8 A
最大漏源导通电阻	0.35 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-XQCC-N15
元件数量	1
端子数量	15
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	25 W
最大脉冲漏极电流 (IDM)	32 A
认证状态	Qualified
参考标准	MIL-19500/601
表面贴装	YES
端子形式	NO LEAD
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED N-CHANNEL MOSFET

Reference MIL-PRF-19500/601

DEVICES

LEVELS

2N7261

2N7261U

JANSR (100K RAD(Si))

JANSF (300K RAD(Si))

ABSOLUTE MAXIMUM RATINGS (T

= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

= +25°C

Continuous Drain Current

= +100°C

Max. Power Dissipation

Drain to Source On State Resistance

Operating & Storage Temperature

Note:

(1) Derated Linearly by 0.2 W/°C for T

> +25°C

(2) V

= 12Vdc, I

= 5.0A

PRE-IRRADIATION ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise

noted)

Parameters / Test Conditions

Drain-Source Breakdown Voltage

= 0V, I

= 1mAdc

Gate-Source Voltage (Threshold)

≥

, I

= 1.0mA

≥

, I

= 1.0mA, T

= +125°C

≥

, I

= 1.0mA, T

= -55°C

Gate Current

= ±20V, V

= 0V

= ±20V, V

= 0V, T

= +125°C

Drain Current

= 0V, V

= 80V

= 0V, V

= 100V, T

= +125°C

= 0V, V

= 80V, T

= +125°C

Static Drain-Source On-State Resistance

= 12V, I

= 5.0A pulsed

= 12V, I

= 8.0A pulsed

= +125°C

= 12V, I

= 5.0A pulsed

Diode Forward Voltage

= 0V, I

= 8.0A pulsed

Symbol

(BR)DSS

GS(th)1

GS(th)2

GS(th)3

GSS1

GSS2

DSS1

DSS2

DSS3

DS(on)1

DS(on)2

DS(on)3

Min.

100

2.0

1.0

4.0

5.0

±100

±200

1.0

0.25

0.180

0.185

0.35

1.5

Max.

Unit

Vdc

Symbol

ds(on)

, T

stg

Value

100

± 20

8.0

5.0

(1)

0.180

(2)

-55 to +150

Unit

Vdc

Adc

°C

TO-205AF

(modified TO-39)

JANSR2N7261, JANSF2N7261

See Figure 1

Vdc

nAdc

µAdc

mAdc

Vdc

18 PIN LEADLESS CHIP CARRIER

JANSR2N7261U, JANSF2N7261U

See Figure 2

T4-LDS-0119 Rev. 2 (101017)

Page 1 of 5

JANSF2N7261U相似产品对比

	JANSF2N7261U	2N7261U	JANSR2N7261	2N7261	JANSR2N7261U
描述	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18
Objectid	1817750355	1713985525	1713985555	1713985528	1713985552
包装说明	LEADLESS PACKAGE-18	CHIP CARRIER, R-XQCC-N15	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	LEADLESS PACKAGE-18
针数	18	18	2	2	18
Reach Compliance Code	compliant	compliant	compliant	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	SOURCE	SOURCE	DRAIN	DRAIN	SOURCE
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	8 A	8 A	8 A	8 A	8 A
最大漏源导通电阻	0.35 Ω	0.35 Ω	0.35 Ω	0.35 Ω	0.35 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-XQCC-N15	R-XQCC-N15	O-MBCY-W3	O-MBCY-W3	R-XQCC-N15
元件数量	1	1	1	1	1
端子数量	15	15	3	3	15
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	UNSPECIFIED	UNSPECIFIED	METAL	METAL	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	ROUND	ROUND	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CYLINDRICAL	CYLINDRICAL	CHIP CARRIER
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Qualified	Not Qualified	Qualified	Not Qualified	Qualified
表面贴装	YES	YES	NO	NO	YES
端子形式	NO LEAD	NO LEAD	WIRE	WIRE	NO LEAD
端子位置	QUAD	QUAD	BOTTOM	BOTTOM	QUAD
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
是否Rohs认证	不符合	不符合	不符合	-	不符合
参考标准	MIL-19500/601	-	MIL-19500/601	-	MIL-19500/601

JANSF2N7261U

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JANSF2N7261U概述

JANSF2N7261U规格参数

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