Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| Objectid | 1713985552 |
| 包装说明 | LEADLESS PACKAGE-18 |
| 针数 | 18 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Samacsys Manufacturer | Microsemi Corporation |
| Samacsys Modified On | 2020-06-12 09:16:55 |
| YTEOL | 0 |
| 外壳连接 | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 8 A |
| 最大漏源导通电阻 | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XQCC-N15 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 15 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Qualified |
| 参考标准 | MIL-19500/601 |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 晶体管元件材料 | SILICON |

| JANSR2N7261U | JANSF2N7261U | 2N7261U | JANSR2N7261 | 2N7261 | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18 | Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18 | Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18 | Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN | Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN |
| Objectid | 1713985552 | 1817750355 | 1713985525 | 1713985555 | 1713985528 |
| 包装说明 | LEADLESS PACKAGE-18 | LEADLESS PACKAGE-18 | CHIP CARRIER, R-XQCC-N15 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| 针数 | 18 | 18 | 18 | 2 | 2 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | SOURCE | SOURCE | SOURCE | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 8 A | 8 A | 8 A | 8 A | 8 A |
| 最大漏源导通电阻 | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XQCC-N15 | R-XQCC-N15 | R-XQCC-N15 | O-MBCY-W3 | O-MBCY-W3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 15 | 15 | 15 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | ROUND |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Qualified | Qualified | Not Qualified | Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | NO | NO |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | WIRE | WIRE |
| 端子位置 | QUAD | QUAD | QUAD | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - |
| 参考标准 | MIL-19500/601 | MIL-19500/601 | - | MIL-19500/601 | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved