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JANSR2N7261U

产品描述Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18
产品类别分立半导体    晶体管   
文件大小282KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
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JANSR2N7261U概述

Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18

JANSR2N7261U规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
Objectid1713985552
包装说明LEADLESS PACKAGE-18
针数18
Reach Compliance Codecompliant
ECCN代码EAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2020-06-12 09:16:55
YTEOL0
外壳连接SOURCE
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压100 V
最大漏极电流 (ID)8 A
最大漏源导通电阻0.35 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-XQCC-N15
JESD-609代码e0
元件数量1
端子数量15
工作模式ENHANCEMENT MODE
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式CHIP CARRIER
极性/信道类型N-CHANNEL
认证状态Qualified
参考标准MIL-19500/601
表面贴装YES
端子面层TIN LEAD
端子形式NO LEAD
端子位置QUAD
晶体管元件材料SILICON

文档预览

下载PDF文档
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
DEVICES
LEVELS
2N7261
2N7261U
JANSR (100K RAD(Si))
JANSF (300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
T
C
= +25°C
Continuous Drain Current
T
C
= +100°C
Max. Power Dissipation
Drain to Source On State Resistance
Operating & Storage Temperature
Note:
(1) Derated Linearly by 0.2 W/°C for T
C
> +25°C
(2) V
GS
= 12Vdc, I
D
= 5.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise
noted)
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 1mAdc
Gate-Source Voltage (Threshold)
V
DS
V
GS
, I
D
= 1.0mA
V
DS
V
GS
, I
D
= 1.0mA, T
j
= +125°C
V
DS
V
GS
, I
D
= 1.0mA, T
j
= -55°C
Gate Current
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V, T
j
= +125°C
Drain Current
V
GS
= 0V, V
DS
= 80V
V
GS
= 0V, V
DS
= 100V, T
j
= +125°C
V
GS
= 0V, V
DS
= 80V, T
j
= +125°C
Static Drain-Source On-State Resistance
V
GS
= 12V, I
D
= 5.0A pulsed
V
GS
= 12V, I
D
= 8.0A pulsed
T
j
= +125°C
V
GS
= 12V, I
D
= 5.0A pulsed
Diode Forward Voltage
V
GS
= 0V, I
D
= 8.0A pulsed
Symbol
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
I
DSS3
r
DS(on)1
r
DS(on)2
r
DS(on)3
V
SD
Min.
100
2.0
1.0
4.0
5.0
±100
±200
25
1.0
0.25
0.180
0.185
0.35
1.5
Max.
Unit
Vdc
Symbol
V
DS
V
GS
I
D1
I
D2
P
tl
R
ds(on)
T
op
, T
stg
Value
100
± 20
8.0
5.0
25
(1)
0.180
(2)
-55 to +150
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
TO-205AF
(modified TO-39)
JANSR2N7261, JANSF2N7261
See Figure 1
Vdc
nAdc
µAdc
mAdc
mAdc
Ω
Ω
Ω
Vdc
18 PIN LEADLESS CHIP CARRIER
JANSR2N7261U, JANSF2N7261U
See Figure 2
T4-LDS-0119 Rev. 2 (101017)
Page 1 of 5

JANSR2N7261U相似产品对比

JANSR2N7261U JANSF2N7261U 2N7261U JANSR2N7261 2N7261
描述 Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18 Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18 Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADLESS PACKAGE-18 Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN
Objectid 1713985552 1817750355 1713985525 1713985555 1713985528
包装说明 LEADLESS PACKAGE-18 LEADLESS PACKAGE-18 CHIP CARRIER, R-XQCC-N15 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
针数 18 18 18 2 2
Reach Compliance Code compliant compliant compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 SOURCE SOURCE SOURCE DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 100 V 100 V 100 V 100 V 100 V
最大漏极电流 (ID) 8 A 8 A 8 A 8 A 8 A
最大漏源导通电阻 0.35 Ω 0.35 Ω 0.35 Ω 0.35 Ω 0.35 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-XQCC-N15 R-XQCC-N15 R-XQCC-N15 O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1 1
端子数量 15 15 15 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED METAL METAL
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR ROUND ROUND
封装形式 CHIP CARRIER CHIP CARRIER CHIP CARRIER CYLINDRICAL CYLINDRICAL
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Qualified Qualified Not Qualified Qualified Not Qualified
表面贴装 YES YES YES NO NO
端子形式 NO LEAD NO LEAD NO LEAD WIRE WIRE
端子位置 QUAD QUAD QUAD BOTTOM BOTTOM
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
是否Rohs认证 不符合 不符合 不符合 不符合 -
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