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IDT70V7399S133DAI: 产品描述Dual-Port SRAM, 128KX18, 15ns, PQFP144, TQFP-144; 产品类别存储存储; 文件大小256KB，共22页; 制造商IDT (Integrated Device Technology)

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IDT70V7399S133DAI概述

Dual-Port SRAM, 128KX18, 15ns, PQFP144, TQFP-144

IDT70V7399S133DAI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
Objectid	1538969160
零件包装代码	QFP
包装说明	LFQFP,
针数	144
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
compound_id	6557317
最长访问时间	15 ns
JESD-30 代码	S-PQFP-G144
JESD-609代码	e0
长度	20 mm
内存密度	2359296 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	144
字数	131072 words
字数代码	128000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX18
封装主体材料	PLASTIC/EPOXY
封装代码	LFQFP
封装形状	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	20
宽度	20 mm

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HIGH-SPEED 3.3V 128K x 18

SYNCHRONOUS

BANK-SWITCHABLE

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

PRELIMINARY

IDT70V7399S

128K x 18 Synchronous Bank-Switchable Dual-ported

SRAM Architecture

–

64 independent 2K x 18 banks

– 2 megabits of memory on chip

Bank access controlled via bank address pins

High-speed data access

– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

– Industrial: 4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

Counter enable and repeat features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 6ns cycle time, 166MHz operation (12Gbps bandwidth)

– Fast 3.6ns clock to data out

– 1.7ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 166MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus

matching compatibility

LVTTL- compatible, 3.3V (±150mV) power supply

for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

Industrial temperature range (-40°C to +85°C) is

available at 133MHz.

Available in a 144-pin Thin Quad Flatpack (TQFP),

208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball

Grid Array (BGA)

Supports JTAG features compliant with IEEE 1149.1

Functional Block Diagram

PL/FT

OPT

CLK

ADS

CNTEN

REPEAT

R/W

PL/FT

OPT

CLK

ADS

CNTEN

REPEAT

R/W

CONTROL

LOGIC

MUX

2Kx18

MEMORY

ARRAY

(BANK 0)

MUX

CONTROL

LOGIC

I/O

0L-17L

I/O

CONTROL

MUX

2Kx18

MEMORY

ARRAY

(BANK 1)

MUX

I/O

CONTROL

I/O

0R-17R

10L

ADDRESS

DECODE

ADDRESS

DECODE

10R

BANK

DECODE

MUX

2Kx18

MEMORY

ARRAY

(BANK 63)

BANK

DECODE

NOTE:

1. The Bank-Switchable dual-port uses a true SRAM

core instead of the traditional dual-port SRAM core.

As a result, it has unique operating characteristics.

Please refer to the functional description on page 19

for details.

MUX

TDI

TDO

JTAG

TMS

TCK

TRST

5630 drw 01

JANUARY 2001

DSC 5630/1

IDT70V7399S133DAI相似产品对比

	IDT70V7399S133DAI	IDT70V7399S166DAG	IDT70V7399S133DAG	IDT70V7399S166DA	IDT70V7399S133DA
描述	Dual-Port SRAM, 128KX18, 15ns, PQFP144, TQFP-144	Dual-Port SRAM, 128KX18, 12ns, PQFP144, TQFP-144	Dual-Port SRAM, 128KX18, 15ns, PQFP144, TQFP-144	Dual-Port SRAM, 128KX18, 12ns, PQFP144, TQFP-144	Dual-Port SRAM, 128KX18, 15ns, PQFP144, TQFP-144
是否无铅	含铅	不含铅	不含铅	含铅	含铅
是否Rohs认证	不符合	符合	符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	QFP	QFP	QFP	QFP	QFP
包装说明	LFQFP,	LFQFP,	LFQFP,	LFQFP,	LFQFP,
针数	144	144	144	144	144
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	15 ns	12 ns	15 ns	12 ns	15 ns
JESD-30 代码	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144
JESD-609代码	e0	e3	e3	e0	e0
长度	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	18	18
湿度敏感等级	3	3	3	3	3
功能数量	1	1	1	1	1
端子数量	144	144	144	144	144
字数	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	70 °C	70 °C
组织	128KX18	128KX18	128KX18	128KX18	128KX18
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFQFP	LFQFP	LFQFP	LFQFP	LFQFP
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	260	260	225	225
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	20	30	30	20	20
宽度	20 mm	20 mm	20 mm	20 mm	20 mm

IDT70V7399S133DAI

IDT70V7399S133DAI概述

IDT70V7399S133DAI规格参数

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