2N5551HR
Hi-Rel NPN bipolar transistor 160 V, 0.5 A
Datasheet
-
production data
3
Features
BV
CEO
160 V
0.5 A
> 80
1
2
1
2
3
I
C
(max)
H
FE
at 5 V - 10 mA
TO-18
3
4
1
2
LCC-3
•
Hermetic packages
•
ESCC and JANS qualified
•
Up to 100 krad(Si) low dose rate
UB
Pin 4 in UB is connected to the metallic lid.
Description
The 2N5551HR is a silicon planar NPN transistor
specifically designed and housed in hermetic
packages for aerospace and Hi-Rel applications.
It is available in the JAN qualification system
(MIL-PRF19500 compliance) and in the ESCC
qualification system (ESCC 5000 compliance). In
case of discrepancies between this datasheet and
the relevant agency specification, the latter takes
precedence.
Figure 1. Internal schematic diagram
Table 1. Device summary
Device
Qualification
system
JANSR
JANS
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
Agency
specification
MIL-PRF-
19500/767
MIL-PRF-
19500/767
5201/019
5201/019
5201/019
5201/019
5201/019
5201/019
Package
Radiation level
100 krad
high and low dose rate
-
100 krad - low dose rate
-
100 krad - low dose rate
-
100 krad - low dose rate
-
EPPL
JANSR2N5551UBx
JANS2N5551UBx
2N5551RUBx
2N5551UBx
SOC5551RHRx
SOC5551HRx
2N5551RHRx
2N5551HRx
January 2017
UB
UB
UB
UB
LCC-3
LCC-3
TO-18
TO-18
-
-
Target
Target
Yes
Yes
-
-
1/19
www.st.com
DocID16935 Rev 11
This is information on a product in full production.
Contents
2N5551HR
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
4.2
4.3
LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
TO-18 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
6
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.1
6.2
Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
DocID16935 Rev 11
2N5551HR
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
for TO-18
for LCC-3 and UB
Total dissipation at T
amb
≤
25 °C
for TO-18
for LCC-3 and UB
for LCC-3 and UB
(1)
Total dissipation at T
c
≤
25 °C
for TO-18
Storage temperature
Max. operating junction temperature
Value
180
160
6
0.6
0.5
0.36
0.36
0.58
1.2
-65 to 200
200
Unit
V
V
V
A
A
W
W
W
W
°C
°C
P
TOT
TSTG
TJ
1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
Table 3. Thermal data for through-hole package
Symbol
R
thJC
R
thJA
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
__
__
max
max
Value
146
486
Unit
°C/W
°C/W
Table 4. Thermal data for SMD package
Symbol
R
thJA
Parameter
Thermal resistance junction-ambient
__
max
max
Value
486
302
Unit
°C/W
°C/W
Thermal resistance junction-ambient
(1)
__
1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
DocID16935 Rev 11
3/19
19
Electrical characteristics
2N5551HR
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 5. Electrical characteristics
Symbol
I
CBO
I
EBO
Parameter
Collector-base cut-off
current (I
E
= 0)
Emitter-base cut-off
current (I
C
= 0)
Collector-base
breakdown voltage
(I
E
= 0)
Collector-emitter
breakdown voltage
(I
B
= 0)
Emitter-base
breakdown voltage
(I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Test conditions
V
CB
= 120 V
V
CB
= 120 V
V
EB
= 4 V
Min.
Typ.
-
-
Max.
50
50
50
Unit
nA
µA
nA
T
C
= 150 °C
V
(BR)CBO
I
C
= 100 µA
180
-
V
V
(BR)CEO
(1)
I
C
= 1 mA
160
-
V
V
(BR)EBO
I
E
= 10 µA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 10 mA
T
amb
= - 55 °C
For ESCC
V
CE
= 10 V
f > 1 kHz
For JANS
V
CE
= 10 V
f > 20 kHz
V
CE
= 10 V
f > 100 MHz
V
CB
= 10 V
For ESCC
V
EB
= 5 V
For JANS
V
EB
= 500 mV
I
B
= 1 mA
I
B
= 5 mA
I
B
= 1 mA
I
B
= 5 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
6
-
0.15
0.2
1
1
250
-
V
V
V
V
V
V
CE(sat) (1)
V
BE(sat) (1)
-
-
80
80
30
20
h
FE (1)
DC current gain
I
C
= 10 mA
50
-
h
fe
Small signal current
gain
I
C
= 10 mA
I
C
= 10 mA
2.5
h
fe
C
obo
Small signal current
gain
Output capacitance
(I
E
= 0)
1
-
-
-
6
20
45
pF
pF
pF
f = 1 MHz
C
ebo
Emitter-base
capacitance (I
C
= 0)
f = 1 MHz
f = 1 MHz
1. Pulsed duration = 300 µs, duty cycle £ 1.5%
4/19
DocID16935 Rev 11
2N5551HR
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2. h
FE
@ V
CE
= 5 V
AM16336v1
Figure 3. V
CE(sat)
@ h
FE
=10
AM16337v1
1000
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
1
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
100
0.1
10
0.001
I
C
(A)
0.01
0.1
0.01
0.001
I
C
(A)
0.01
0.1
Figure 4. V
BE(sat)
@ h
FE
=10
AM16338v1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.001
I
C
(A)
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
0.01
0.1
DocID16935 Rev 11
5/19
19
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