电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

UM2301

产品描述Pin Diode, 100V V(BR), Silicon,
产品类别分立半导体    二极管   
文件大小119KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

UM2301概述

Pin Diode, 100V V(BR), Silicon,

UM2301规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
Objectid1476569691
Reach Compliance Codeunknown
ECCN代码EAR99
YTEOL0
其他特性LOW DISTORTION
应用ATTENUATOR; SWITCHING
最小击穿电压100 V
外壳连接ANODE
配置SINGLE
最大二极管电容20 pF
标称二极管电容15 pF
二极管元件材料SILICON
最大二极管正向电阻0.4 Ω
二极管电阻测试电流100 mA
二极管电阻测试频率1 MHz
二极管类型PIN DIODE
频带MEDIUM FREQUENCY
JESD-30 代码S-XSSO-G1
JESD-609代码e0
少数载流子标称寿命80 µs
元件数量1
端子数量1
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式SMALL OUTLINE
认证状态Not Qualified
反向测试电压100 V
表面贴装YES
技术POSITIVE-INTRINSIC-NEGATIVE
端子面层TIN LEAD
端子形式GULL WING
端子位置SINGLE

文档预览

下载PDF文档
580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
UM2300
SERIES
Features
LF band (100 KHz) PIN
Long Lifetime (80
µs
typ.)
High Power (1 KW CW)
High Isolation (35 dB)
Low Loss (0.2 dB)
Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
PIN DIODE
SWITCH
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80
µS
typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘ ’
off state).
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘0 dB ’attenuator state.
130
120
110
100
90
200 KHz
100 KHz
Ct (pF)
80
70
60
50
40
30
20
10
0
0
4 MHz
1 MHz
400 KHz
2 MHz
20
40
60
80
100
120
140
160
180
200
Vr (VOLTS)
Voltage Ratings (25°
C)
Reverse Voltage ( V
R
)
@ I
R
= 10
µA
100
200
400
600
800
1000
Max.
0.4
20
10
Units
pF
µA
µs
dBm
DEVICE
Electrical Specifications (25°
C)
Test
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
IP3
Min.
Typ.
0.3
15
80
60
VOLTS............ UM2301
VOLTS............ UM2302
VOLTS............ UM2304
VOLTS............ UM2306
VOLTS............ UM2308
VOLTS............ UM2310
Conditions
F
1
= 1 MHz, 100 mA
F
2
= 1 MHz, 100 V
@ Rated Voltage
I
f
= 10 mA / 100 V
2 WATT total, I
f
= 25 mA
F
1
= 0.999 MHz, F
2
= 1.001 MHz
1.0 WATT/ tone
25° Stud Temperature
C
60
50
Thermal Resistance
1.0
°
/W
C
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)

UM2301相似产品对比

UM2301 UM2310 UM2308 UM2306 UM2304 UM2302 UM2300
描述 Pin Diode, 100V V(BR), Silicon, Pin Diode, 1000V V(BR), Silicon, Pin Diode, 800V V(BR), Silicon, PIN DIODE Pin Diode, 400V V(BR), Silicon, Pin Diode, 200V V(BR), Silicon, PIN DIODE

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1099  1353  1304  801  452  23  28  27  17  10 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved