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UM2310

产品描述Pin Diode, 1000V V(BR), Silicon,
产品类别分立半导体    二极管   
文件大小119KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
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UM2310概述

Pin Diode, 1000V V(BR), Silicon,

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580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
UM2300
SERIES
Features
LF band (100 KHz) PIN
Long Lifetime (80
µs
typ.)
High Power (1 KW CW)
High Isolation (35 dB)
Low Loss (0.2 dB)
Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
PIN DIODE
SWITCH
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80
µS
typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘ ’
off state).
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘0 dB ’attenuator state.
130
120
110
100
90
200 KHz
100 KHz
Ct (pF)
80
70
60
50
40
30
20
10
0
0
4 MHz
1 MHz
400 KHz
2 MHz
20
40
60
80
100
120
140
160
180
200
Vr (VOLTS)
Voltage Ratings (25°
C)
Reverse Voltage ( V
R
)
@ I
R
= 10
µA
100
200
400
600
800
1000
Max.
0.4
20
10
Units
pF
µA
µs
dBm
DEVICE
Electrical Specifications (25°
C)
Test
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
IP3
Min.
Typ.
0.3
15
80
60
VOLTS............ UM2301
VOLTS............ UM2302
VOLTS............ UM2304
VOLTS............ UM2306
VOLTS............ UM2308
VOLTS............ UM2310
Conditions
F
1
= 1 MHz, 100 mA
F
2
= 1 MHz, 100 V
@ Rated Voltage
I
f
= 10 mA / 100 V
2 WATT total, I
f
= 25 mA
F
1
= 0.999 MHz, F
2
= 1.001 MHz
1.0 WATT/ tone
25° Stud Temperature
C
60
50
Thermal Resistance
1.0
°
/W
C
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)

UM2310相似产品对比

UM2310 UM2308 UM2306 UM2304 UM2302 UM2301 UM2300
描述 Pin Diode, 1000V V(BR), Silicon, Pin Diode, 800V V(BR), Silicon, PIN DIODE Pin Diode, 400V V(BR), Silicon, Pin Diode, 200V V(BR), Silicon, Pin Diode, 100V V(BR), Silicon, PIN DIODE

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