MBRT40020 thru MBRT40040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V
RRM
• Isolation Type Package
Three Tower Package
V
RRM
= 20 V - 100 V
I
F
= 400 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse voltage
g
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
MBRT40020 (R) MBRT40030 (R) MBRT40035 (R) MBRT40040 (R) Unit
20
14
20
400
3000
-40 to 150
-40 to 175
30
21
30
400
3000
-40 to 150
-40 to 175
35
25
35
400
3000
-40 to 150
-40 to 175
40
28
40
400
3000
-40 to 150
-40 to 175
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 200 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
MBRT40020 (R) MBRT40030(R) MBRT40035 (R) MBRT40040 (R) Unit
0.75
1
20
0.14
0.75
1
20
0.14
0.75
1
20
0.14
0.75
1
20
0.14
V
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
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