LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current
High breakdown voltage
Guard ring protected
Low diode capacitance.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LBAS70LT1G
Series
S-LBAS70LT1G
Series
3
1
2
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes with an integrated guard ring for
stress protection.Single diodes and double diodes with different
pinning are available.
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
SOT- 23
1
Anode
BAS70 single diode.
3
Cathode
3
Cathode/Anode
LBAS70LT1G
S-LBAS70LT1G
LBAS70LT3G
S-LBAS70LT3G
LBAS70-04LT1G
S-LBAS70-04LT1G
LBAS70-04LT3G
S-LBAS70-04LT3G
LBAS70-05LT1G
S-LBAS70-05LT1G
LBAS70-05LT3G
S-LBAS70-05LT3G
LBAS70-06LT1G
S-LBAS70-06LT1G
LBAS70-06LT3G
S-LBAS70-06LT3G
BE
BE
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
1
Anode
2
Cathode
BAS70-04 double diode.
CG
CG
EH
EH
EH
3
Cathode
1
Anode
BAS70-05 double diode.
2
Anode
GK
GK
3
Anode
1
Cathode
2
Cathode
BAS70-06 double diode.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LBAS70LT1G Series , S-LBAS70LT1G Series
MAXIMUM RATINGS
(T
A
= 25
°
C)
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive Peak forward surge current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
V
R
I
F
I
FSM
I
FSM
T
stg
T
j
T
amb
Min.
-
-
-
-
-65
-
-65
Max.
70
70
70
100
+150
150
+150
Unit
V
mA
mA
mA
°C
°C
°C
Conditions
t
p
<1s;δ<0.5
t
p
<10ms
DEVICE MARKING
LBAS70LT1G=BE LBAS70-04LT1G=CG LBAS70-05LT1G=EH LBAS70-06LT1G=GK
ELECTRICAL CHARACTERISTICS(T
A
= 25
°C
)
Parameter
Forward voltage(Fig.1)
Symbol
V
F
Max.
410
750
1
100
10
Charge carrier life time
(krakauer method)
Diode capacitance(Fig.4)
Note:
1. Pulse test:t
p
=300µs;δ=0.02.
Unit
mV
mv
v
nΑ
µA
ps
pF
Conditions
I
F
=1mA
I
F
=10mA
I
F
=15mA
V
R
=50V
V
R
=70V
I
F
=5mA
f=1MHz;V
R
=0
Reverse current(Fig.2
;
note1)
I
R
τ
C
d
100
2
THERMAL CHARACTERISTICS
PARAMETER
Thermal resistance from junction to ambient
SYMBOL
R
th j-a
VALUE
500
UNIT
k/w
CONDITIONS
note1
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LBAS70LT1G Series , S-LBAS70LT1G Series
Electrical characteristic curves(T
A
= 25°C)
10
IF, FORWARD CURRENT (mA)
2
10
IR , REVERSE CURRENT (μA)
2
10
Tamb=125
O
C
10
1
-
1
10
-2
1
Tamb=85
O
C
O
1
10-
Tamb=125 C
Tamb=85
O
C
Tamb=25
O
C
Tamb=-40 C
O
10
Tamb=25
O
C
10
-2
0
0.2
0.4
0.6
0.8
1.0
10-3
0
20
40
60
80
FORWARD VOLTAGE: V (V)
F
Fig.1 Forward current as a function of
forward voltage; typical values.
FORWARD VOLTAGE: V (V)
R
Fig.2 Reverse current as a function of
reverse voltage; typical values.
10
3
Differential forward resistance
rdif
(Ω)
2
10
2
C T, CAPACITANCE (pF)
2
1.5
1
10
0.5
1
-1
10
1
10
f=10KHz
10
0
0
20
40
60
80
O
Fig.3 Differential forward resistance as a function
of forward current;typical values.
FORWARD VOLTAGE: I (mA)
F
Fig.4 Diode capacitance as a function of reverse
voltage;typical values.
FORWARD VOLTAGE: V (V)
R
f=1MHz Tamb=25 C
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LBAS70LT1G Series , S-LBAS70LT1G Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.085
0.35
0.89
2.10
0.45
0.100
0.177
0.69
1.02
2.64
0.60
C
D
H
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4